Semiconductor device and method for fabricating the same

Abstract

A method for fabricating a semiconductor device includes forming a trench in a substrate, forming a gate electrode buried over the trench to form a buried gate pattern, etching portions of the substrate on both sides of the buried gate pattern to a certain depth, performing an ion implantation process on the substrate to form source/drain junctions, and forming metal patterns over the source/drain junctions.

1 - 9 . (canceled) 
     
     
         10 . A semiconductor device, comprising:
 a substrate including a trench;   spacers formed over sidewalls of the trench;   a buried gate pattern buried over the trench;   source/drain junctions formed in the substrate on both sides of the buried gate pattern; and   metal patterns formed over the source/drain junctions.   
     
     
         11 . The semiconductor device of  claim 10 , further comprising bit line contacts formed over the metal patterns. 
     
     
         12 . The semiconductor device of  claim 10 , wherein the source/drain junctions are formed at a lower position than the buried gate pattern and the metal patterns are formed with a surface flush with a surface of the buried gate pattern. 
     
     
         13 - 14 . (canceled)