US2011163407A1PendingUtilityA1

Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system

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Assignee: CANON KKPriority: Dec 12, 2003Filed: Mar 16, 2011Published: Jul 7, 2011
Est. expiryDec 12, 2023(expired)· nominal 20-yr term from priority
Inventors:Hiroshi YuzuriharaRyuichi MishimaTakanori WatanabeTakeshi IchikawaSeiichi Tamura
H10F 39/8063H10F 39/8053H10F 39/802H10F 39/18H10F 30/20H10F 39/026H10F 39/12
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Claims

Abstract

A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C 1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C 2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C 3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2<C3<C1.

Claims

exact text as granted — not AI-modified
1 . A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type, and a plurality of impurity regions of the second conduction type opposite to the first conduction type, said plurality of second-conduction-type impurity regions including at least a first impurity region, a second impurity region provided between said first impurity region and a surface of said substrate, and a third impurity region provided between said second impurity region and the surface of said substrate,
 wherein a concentration C 1  corresponding to a peak of the impurity concentration in said first impurity region, a concentration C 2  corresponding to a peak of the impurity concentration in said second impurity region and a concentration C 3  corresponding to a peak of the impurity concentration in said third impurity region satisfy the following relationship:
   C2<C3<C1. 
   
     
     
         2 - 24 . (canceled)

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