Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source

Abstract

A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

1 . An apparatus for producing a nitride semiconductor light source, the apparatus comprising:
 a baking furnace configured to clean at least one of a nitride semiconductor light source chip, a stem configured for mounting the nitride semiconductor light source chip thereon, and a cap configured to cover the nitride semiconductor light source chip, the baking furnace configured to heat at least one of the nitride semiconductor light source chip, the stem, and the cap in a first atmosphere; and   a capping portion configured to encapsulate the nitride semiconductor light source chip in a second atmosphere such that the nitride semiconductor light source chip is encapsulated in a sealed container formed by the stem and the cap.   
     
     
         2 . The apparatus according to  claim 1 , wherein the nitride semiconductor light source chip has a light emission wavelength of 420 nm or less. 
     
     
         3 . The apparatus according to  claim 1 , wherein the baking furnace is configured to heat the nitride semiconductor light source chip, the stem, and the cap in the first atmosphere at a temperature ranging from 100° C. to 500° C. 
     
     
         4 . The apparatus according to  claim 1 , wherein:
 the first atmosphere includes an inert gas, an inert gas and oxygen gas, or dry air with a moisture concentration of 1000 ppm or less; and   the second atmosphere includes an inert gas and oxygen gas, or dry air with a moisture concentration of 1000 ppm or less.   
     
     
         5 . The apparatus according to  claim 1 , wherein the first atmosphere and the second atmosphere are identical atmospheres. 
     
     
         6 . The apparatus according to  claim 1 , wherein the baking furnace is configured to heat the nitride semiconductor light source chip, the stem, and the cap in the first atmosphere at a temperature ranging from 200° C. to 350° C. 
     
     
         7 . An apparatus for producing a nitride semiconductor light source, the apparatus comprising:
 an ashing treatment equipment configured to clean surfaces of a nitride semiconductor light source chip, a stem configured for mounting the nitride semiconductor light source chip thereon, and a cap configured to cover the nitride semiconductor light source chip, the ashing treatment equipment configured to expose the surfaces to ozone or excited oxygen atoms; and   a capping portion configured to encapsulate the nitride semiconductor light source chip in an atmosphere of a first gas such that the nitride semiconductor light source chip is encapsulated in a sealed container formed by the stem and the cap.   
     
     
         8 . The apparatus according to  claim 7 , wherein the nitride semiconductor light source chip has a light emission wavelength of 450 nm or less. 
     
     
         9 . The apparatus according to  claim 7 , wherein:
 the first atmosphere includes an inert gas, an inert gas and oxygen gas, or dry air with a moisture concentration of 1000 ppm or less; and   the second atmosphere includes an inert gas and oxygen gas, or dry air with a moisture concentration of 1000 ppm or less.