US2011186849A1PendingUtilityA1

Tft substrate for display device and manufacturing method of the same

Assignee: NA BYOUNG-SUNPriority: Feb 11, 2005Filed: Apr 11, 2011Published: Aug 4, 2011
Est. expiryFeb 11, 2025(expired)· nominal 20-yr term from priority
H10D 30/6723H10D 86/441H10D 86/60H10D 30/6729H10D 30/673H10D 30/6713G02F 1/136
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Claims

Abstract

Disclosed is a TFT substrate for a display apparatus comprising a gate wiring including a gate electrode, a data wiring including a data line, a source electrode connected to the data line, and a drain electrode connected to a pixel electrode, and a semiconductor layer disposed between the gate wiring and the data wiring, wherein the semiconductor layer under the drain electrode is disposed within an area overlapping the gate electrode and the semiconductor layer under the source electrode extends outward to an area not overlapping the gate electrode. Advantageously, the present disclosure provides a TFT substrate for a display apparatus having a high aperture ratio and causing less afterimaging, and a manufacturing method of the same.

Claims

exact text as granted — not AI-modified
1 . A TFT substrate for a display apparatus, comprising:
 a gate wiring including a gate electrode;   a data wiring including a data line, a source electrode connected to the data line, and a drain electrode connected to a pixel electrode; and   a semiconductor layer disposed between the gate wiring and the data wiring,   wherein the source electrode includes a portion extended along the gate electrode, and an edge of the gate electrode passes through a portion of the extended portion of the source electrode, and   a first portion of an end of the semiconductor layer closer to the drain electrode than the source electrode overlaps with the gate electrode.   
     
     
         2 .- 41 . (canceled)

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