Inductor formed on a semiconductor substrate

Abstract

An inductor formed on a semiconductor substrate, comprising a coil formed with at least a single metal layer having a plurality of slots and an insulator layer filled in the plurality of slots, wherein the insulator layer is encompassed in the single metal layer and the insulator layer does not cover the top surface of the single metal layer.

1 . An inductor formed on a semiconductor substrate, comprising:
 a coil formed with at least a single metal layer having a plurality of slots; and   an insulator layer filled in the plurality of slots, wherein the insulator layer is encompassed in the single metal layer and the insulator layer does not cover the top surface of the single metal layer.   
     
     
         2 . The inductor of  claim 1 , wherein the insulator layer is formed using silicon oxide. 
     
     
         3 . The inductor of  claim 1 , wherein the slots are arranged in at least a row. 
     
     
         4 . The inductor of  claim 1 , wherein the slots insulator slots have an even and symmetrical distribution in the inductor coil. 
     
     
         5 . The inductor of  claim 1 , wherein the coil comprises a plurality of the single metal layers stacked and connected in parallel. 
     
     
         6 . The inductor of  claim 1 , wherein the coil comprises a plurality of the single metal layers connected in series. 
     
     
         7 . The inductor of  claim 1 , wherein one of the slots shapes as a slim rectangular or is in L-shaped. 
     
     
         8 . An inductor formed on a semiconductor substrate, comprising:
 a coil formed with at least a single metal layer having a plurality of slots; and   an insulator layer filled in the plurality of slots, wherein the insulator layer is encompassed in the single metal layer and the insulator layer does not cover the top and the bottom surface of the single metal layer.   
     
     
         9 . The inductor of  claim 8 , wherein the insulator layer is formed using silicon oxide. 
     
     
         10 . The inductor of  claim 8 , wherein the slots are arranged in at least a row. 
     
     
         11 . The inductor of  claim 8 , wherein the slots insulator slots have an even and symmetrical distribution in the inductor coil. 
     
     
         12 . The inductor of  claim 8 , wherein the coil comprises a plurality of the single metal layers stacked and connected in parallel. 
     
     
         13 . The inductor of  claim 8 , wherein the coil comprises a plurality of the single metal layers connected in series. 
     
     
         14 . An inductor formed on a semiconductor substrate, comprising:
 a coil formed with at least one single metal layer having a plurality of slots; and   an insulator layer filled in the plurality of slots, wherein the insulator layer is encompassed in the single metal layer and the top surface of the insulator layer and the single metal layer is substantially coplanar.   
     
     
         15 . The inductor of  claim 14 , wherein the insulator layer is formed using silicon oxide. 
     
     
         16 . The inductor of  claim 14 , wherein the slots are arranged in at least a row. 
     
     
         17 . The inductor of  claim 14 , wherein the slots insulator slots have an even and symmetrical distribution in the inductor coil. 
     
     
         18 . The inductor of  claim 14 , wherein the coil comprises a plurality of the single metal layers stacked and connected in parallel. 
     
     
         19 . The inductor of  claim 14 , wherein the coil comprises a plurality of the single metal layers connected in series. 
     
     
         20 . The inductor of  claim 14 , wherein one of the slots shapes as a slim rectangular or is in L-shaped.