Method of forming nitride film and nitride structure

Abstract

A method of forming a nitride film by hydride vapor phase epitaxy, the method including: sequentially disposing at least one group III metal source including impurities and a substrate in an external reaction chamber and an internal reaction chamber sequentially located in the direction of gas supply and heating each of the external reaction chamber and the internal reaction chamber at a growth temperature; forming a metal chloride by supplying hydrogen chloride gas and carrier gas into the external reaction chamber to react with the group III metal source and transferring the metal chloride to the substrate; and forming the nitride film doped with the impurities on the substrate by reacting the transferred metal chloride with nitrogen source gas supplied to the internal reaction chamber.

1 - 13 . (canceled) 
     
     
         14 . A nitride structure formed of a group III nitride film having a thickness of more than 5 μm, in which concentration of certain conductive type impurities is uniform in the direction of thickness and 10 16  to 10 20 /cm 3 . 
     
     
         15 . The nitride structure of  claim 14 , wherein the group III nitride film has a thickness of more than 50 μm. 
     
     
         16 . The nitride structure of  claim 15 , wherein the impurities comprise Te and the group III nitride film is an n type nitride. 
     
     
         17 . The nitride structure of  claim 16 , wherein the group III nitride film has a conductivity of more than 4×10 2  (Ω cm) −1 . 
     
     
         18 . The nitride structure of  claim 17 , wherein the impurities comprise Te and concentration of the Te is 2×10 18  to 10 20 /cm 3 . 
     
     
         19 . The nitride structure of  claim 14 , wherein the group III nitride film is Al 1-x-y Ga x In y N (0≦x≦1, 0≦y≦1).