Copper alloy material for electric/electronic parts

Abstract

A copper alloy material for electric/electronic parts, containing Co and Si as additive elements, wherein, a compound A is dispersed, which is composed of Co and Si and has an average particle diameter of 5 nm or more but less than 50 nm, and at least one compound is dispersed, which is selected from: a compound B which does not contain one or any of Co and Si and has an average particle diameter from 50 to 500 nm, a compound C which contains both of Co and Si and another element and has an average particle diameter from 50 to 500 nm, and a compound D which is composed of Co and Si and has an average particle diameter from 50 to 500 nm; a grain size of the copper alloy matrix is 3 to 35 μm; and an electrical conductivity is 50% IACS or more.

1 . A copper alloy material for electric/electronic parts, comprising Co and Si as additive elements,
 wherein, in the copper alloy material, a compound A is dispersed, which is composed of Co and Si and which has an average particle diameter of 5 nm or more but less than 50 nm, and at least one compound is dispersed, in which said at least one compound is selected from the group consisting of a compound B which does not contain one of Co and Si or any of those and which has an average particle diameter from 50 nm to 500 nm, a compound C which contains both of Co and Si and another element and which has an average particle diameter from 50 nm to 500 nm, and a compound D which is composed of Co and Si and which has an average particle diameter from 50 nm to 500 nm,   wherein a grain size of the copper alloy of the matrix is 3 to 35 μm, and   wherein an electrical conductivity is 50% IACS or more.   
     
     
         2 . The copper alloy material for electric/electronic parts according to  claim 1 , comprising Co and Si as additive elements, with the balance being Cu and unavoidable impurities. 
     
     
         3 . The copper alloy material for electric/electronic parts according to  claim 2 , wherein the content of Co is 0.4 to 2.0 mass %, and the content of Si is 0.1 to 0.5 mass %. 
     
     
         4 . The copper alloy material for electric/electronic parts according to  claim 1 , wherein the content of Co is 0.4 to 2.0 mass %, and the content of Si is 0.1 to 0.5 mass %. 
     
     
         5 . The copper alloy material for electric/electronic parts according to  claim 1 , further comprising at least one selected from Fe, Cr, Ni, Zr, and Ti in an amount of 0.05 to 1.0 mass % in total, with the balance being Cu and unavoidable impurities. 
     
     
         6 . The copper alloy material for electric/electronic parts according to  claim 5 , wherein the content of Co is 0.4 to 2.0 mass %, and the content of Si is 0.1 to 0.5 mass %. 
     
     
         7 . The copper alloy material for electric/electronic parts according to  claim 1 , further comprising at least one selected from Al, Ag, Sn, Zn, Mg, Mn, and In in an amount of 0.05 to 1.0 mass % in total, with the balance being Cu and unavoidable impurities. 
     
     
         8 . The copper alloy material for electric/electronic parts according to  claim 7 , wherein the content of Co is 0.4 to 2.0 mass %, and the content of Si is 0.1 to 0.5 mass %. 
     
     
         9 . The copper alloy material for electric/electronic parts according to  claim 7 , further comprising at least one selected from Fe, Cr, Ni, Zr, and Ti in an amount of 0.05 to 1.0 mass % in total, with the balance being Cu and unavoidable impurities. 
     
     
         10 . The copper alloy material for electric/electronic parts according to  claim 9 , wherein the content of Co is 0.4 to 2.0 mass %, and the content of Si is 0.1 to 0.5 mass %. 
     
     
         11 . The copper alloy material for electric/electronic parts according to  claim 1 , wherein, in the production of an ingot, an average cooling speed from the solid state temperature to 500° C. is 5 to 100° C./second. 
     
     
         12 . A copper alloy material for electric/electronic parts, comprising Co and Si as additive elements,
 wherein, a compound A which is composed of Co and Si and which has an average particle diameter of 5 nm or more but less than 50 nm, a compound B which does not contain one of Co and Si or any of those and which has an average particle diameter from 50 nm to 500 nm, a compound C which contains both of Co and Si and another element and which has an average particle diameter from 50 nm to 500 nm, and a compound D which is composed of Co and Si and which has an average particle diameter from 50 nm to 500 nm, are dispersed in the copper alloy material,   wherein the ratio of dispersion densities of the compounds A, B, C, and D satisfies the relationship: 0.0001≦{(dispersion density of the compound B+dispersion density of the compound C+dispersion density of the compound D)/dispersion density of the compound A}≦0.1,   wherein a grain size of the copper alloy of the matrix is 3 to 35 μm, and   wherein an electrical conductivity is 50% IACS or more.   
     
     
         13 . The copper alloy material for electric/electronic parts according to  claim 12 , comprising Co and Si as additive elements, with the balance being Cu and unavoidable impurities. 
     
     
         14 . The copper alloy material for electric/electronic parts according to  claim 13 , wherein the content of Co is 0.4 to 2.0 mass %, and the content of Si is 0.1 to 0.5 mass %. 
     
     
         15 . The copper alloy material for electric/electronic parts according to  claim 12 , wherein the content of Co is 0.4 to 2.0 mass %, and the content of Si is 0.1 to 0.5 mass %. 
     
     
         16 . The copper alloy material for electric/electronic parts according to  claim 12 , further comprising at least one selected from Fe, Cr, Ni, Zr, and Ti in an amount of 0.05 to 1.0 mass % in total, with the balance being Cu and unavoidable impurities. 
     
     
         17 . The copper alloy material for electric/electronic parts according to  claim 16 , wherein the content of Co is 0.4 to 2.0 mass %, and the content of Si is 0.1 to 0.5 mass %. 
     
     
         18 . The copper alloy material for electric/electronic parts according to  claim 12 , further comprising at least one selected from Al, Ag, Sn, Zn, Mg, Mn, and In in an amount of 0.05 to 1.0 mass % in total, with the balance being Cu and unavoidable impurities. 
     
     
         19 . The copper alloy material for electric/electronic parts according to  claim 18 , wherein the content of Co is 0.4 to 2.0 mass %, and the content of Si is 0.1 to 0.5 mass %. 
     
     
         20 . The copper alloy material for electric/electronic parts according to  claim 18 , further comprising at least one selected from Fe, Cr, Ni, Zr, and Ti in an amount of 0.05 to 1.0 mass % in total, with the balance being Cu and unavoidable impurities. 
     
     
         21 . The copper alloy material for electric/electronic parts according to  claim 20 , wherein the content of Co is 0.4 to 2.0 mass %, and the content of Si is 0.1 to 0.5 mass %. 
     
     
         22 . The copper alloy material for electric/electronic parts according to  claim 12 , wherein, in the production of an ingot, an average cooling speed from the solid state temperature to 500° C. is 5 to 100° C./second.