Method of manufacturing filter for printhead

Abstract

A method of manufacturing a membrane filter includes providing a first substrate including a first surface and a second surface; providing a material layer over the first surface of the first substrate; depositing and patterning a first mask layer on a surface of the material layer; etching the material layer exposed through the patterned first mask layer to form a plurality of pore groups, each of the pore groups including a plurality of pores; depositing and patterning a second mask layer on the second surface of the first substrate; and etching the first substrate exposed through the patterned second mask layer to create a plurality of rib structures in the first substrate with a rib structure being located between consecutive pore groups.

1 . A method of manufacturing a membrane filter comprising:
 providing a first substrate comprising a first surface and a second surface;   providing a material layer over the first surface of the first substrate;   depositing and patterning a first mask layer on a surface of the material layer;   etching the material layer exposed through the patterned first mask layer to form a plurality of pore groups, each of the pore groups comprising a plurality of pores;   depositing and patterning a second mask layer on the second surface of the first substrate; and   etching the first substrate exposed through the patterned second mask layer to create a plurality of rib structures in the first substrate with a rib structure being located between consecutive pore groups.   
     
     
         2 . The method of  claim 1 , further comprising:
 providing a second substrate comprising a first surface and a second surface;   depositing and patterning a third mask layer on the first surface of the second substrate;   etching the second substrate exposed through the patterned third mask layer to create a liquid chamber in the second substrate; and   positioning the liquid chamber to allow for fluid communication between the liquid chamber and at least one of the pore groups.   
     
     
         3 . The method of  claim 2 , further comprising adhering the second surface of the first substrate to one of the first surface and the second surface of the second substrate. 
     
     
         4 . The method of  claim 2 , wherein the first substrate and the second substrate are integrated into a third substrate, the third substrate including and etch stop layer positioned between the first substrate and the second substrate. 
     
     
         5 . The method of  claim 4 , wherein the third substrate is a silicon-on-insulator (SOI) substrate. 
     
     
         6 . The method of  claim 4 , further comprising etching the second substrate exposed through the patterned third mask layer through to the etch stop layer to create the liquid chamber in the second substrate; 
     
     
         7 . The method of  claim 1 , further comprising:
 providing a layered stack of substrates comprising the first substrate and one or more additional substrates;   forming a liquid chamber and a nozzle in the one or more additional substrates, wherein the liquid chamber is positioned to allow for fluid communication between the nozzle and at least one of the pore groups.   
     
     
         8 . The method of  claim 7 , further comprising adhering the first substrate to a substrate of the one or more additional substrates with an additional adhesive. 
     
     
         9 . The method of  claim 7 , wherein each pore in the at least one of the pore groups comprises the same size and shape.