Nonvolatile memory devices and method of manufacturing the same

Abstract

Example embodiments provide a nonvolatile memory device using resistive elements. The nonvolatile memory device may include a semiconductor substrate, a plurality of variable resistance patterns on the semiconductor substrate, and a plurality of heat sink patterns that are level with the variable resistance patterns and coupled to a ground voltage.

1 . A method of manufacturing a nonvolatile memory device, the method comprising:
 forming access transistors, which include gate electrodes formed on a semiconductor substrate and first and second junction regions formed in the semiconductor substrate on both ends of the gate electrodes;   forming a ground voltage line coupled to the first junction region and landing pads coupled to the second junction region;   forming variable resistance patterns on the landing pads; and   forming heat sink patterns on the ground voltage line so that the heat sink patterns are adjacent to the variable resistance patterns.   
     
     
         2 . The method of  claim 1 , wherein the heat sink patterns are level with the variable resistance patterns. 
     
     
         3 . The method of  claim 1 , wherein the ground voltage line extends in a first direction. 
     
     
         4 . The method of  claim 3 , wherein the heat sink patterns are formed on the ground voltage line so as to extend in the first direction. 
     
     
         5 . The method of  claim 3 , wherein each of the heat sink patterns includes a first sub-heat sink pattern that is formed on the ground voltage line so as to extend in the first direction, and a second sub-heat sink pattern that extends in a second direction so as to cross the first direction. 
     
     
         6 . The method of  claim 3 , wherein the heat sink patterns include a plurality of sub-heat sink patterns that is formed on the ground voltage line so as to be spaced apart from each other in the first direction. 
     
     
         7 . The method of  claim 3 , further comprising:
 forming spacers defining the widths of the heat sink patterns, respectively.