Method for applying a layer to a substrate

Abstract

A semiconductor wafer ( 10 ) is structured such that fine structures ( 3 ), such as membranes, bridges or tongues, with a thickness d<<D are formed, wherein D designates the thickness of the semiconductor wafer ( 10 ). Then particles of a desired material are applied. A temporal or spatial temperature gradient is generated in the semiconductor wafer ( 10 ), e.g. by progressive heating. In such a heating process the fine structures heat up more quickly and become hotter than the remaining wafer because they have a smaller heat capacity per area and cannot carry off heat as quickly. In this manner, the fine structures can be heated to a temperature that allows a sintering of the particles. For coating the semiconductor wafer ( 10 ) is brought into a reactor ( 11 ). A precursor compound of a metal is provided and fed to the reactor ( 11 ), where a reaction takes place during which the metal is transformed to a final compound and is deposited in the form of particles on the semiconductor wafer ( 10 ).

1 - 12 . (canceled) 
     
     
         13 . A method for applying a layer of a material on a substrate comprising the steps of
 arranging the substrate in a reactor,   providing a precursor compound comprising a metal and feeding the precursor compound to the reactor,   feeding a compound Y to the reactor,   carrying out a reaction inside the reactor in which the metal of the precursor compound is transformed to a final compound.   
     
     
         14 . The method of  claim 13  wherein the final compound forms particles and wherein the particles on the substrate are sintered. 
     
     
         15 . The method of  claim 13  wherein the precursor compound is fed to the reactor as a suspension. 
     
     
         16 . The method of  claim 13  wherein the substance Y comprises oxygen or nitrogen and the final compound comprises an oxide or nitride composition of the metal. 
     
     
         17 . The method of  claim 13  wherein the precursor compound comprises a chloride or fluoride compound. 
     
     
         18 . (canceled) 
     
     
         19 . The method of  claim 13  wherein the precursor compound is deposited on the substrate and then reacts with the substance Y. 
     
     
         20 . The method of  claim 13  wherein the precursor compound reacts with the substance Y prior to hitting the substrate, whereby the final compound is formed, wherein the final compound then hits the substrate, and in particular wherein the final compound hits the substrate in the form of solid particles or droplets. 
     
     
         21 . The method of  claim 13  wherein a flame synthesis is carried out in the reactor, in which the final compound is generated, and in particular wherein the substrate is heated by the flame synthesis. 
     
     
         22 . The method of  claim 13  wherein the precursor compound is introduced into the reactor by means of a nozzle and wherein an electric voltage is applied between the nozzle and the substrate. 
     
     
         23 . The method of  claim 13  wherein the particles have a diameter of not more than 100 nm, in particular not more than 10 nm. 
     
     
         24 . The method of  claim 13  wherein the layer on the substrate is at least partially polarized by applying an electric or magnetic field. 
     
     
         25 . The method of  claim 13  wherein the substrate comprises integrated heaters, which are heated during deposition, and in particular wherein the integrated heaters are arranged in or at the structures. 
     
     
         26 . The method of  claim 13  wherein the substrate is heated by means of heated particles and/or by means of a gas and/or plasma and/or a flame. 
     
     
         27 . The method of  claim 13  comprising the steps of
 synthesizing said final compound or material in a flame during a flame pyrolysis process and 
 heating said substrate by said flame. 
 
     
     
         28 . The method of  claim 13  wherein the substrate is brought into contact with a cooling device. 
     
     
         29 . The method of  claim 13  wherein said substrate is a semiconductor wafer. 
     
     
         30 . The method of  claim 13  further comprising the step of manufacturing one or more sensors, in particular substance sensors, from said substrate. 
     
     
         31 . The method of  claim 13  comprising the step of applying a mask over said substrate for structuring said layer. 
     
     
         32 . The method of  claim 13  comprising the steps of applying several layers on said substrate. 
     
     
         33 . The method of  claim 13  comprising the steps
 structuring the substrate in such a manner that structures of a thickness d<<D are formed at or on the substrate, wherein D is a thickness of said substrate, and 
 applying particles of the material to said substrate and heating the substrate for generating a spatial or temporal temperature gradient in the substrate such that the structures reach a higher temperature T than non-structured regions of the substrate.