Non-aqueous, non-corrosive microelectronic cleaning compositions containing polymeric corrosion inhibitors

Abstract

Photoresist strippers and cleaning compositions of this invention are provided by non-aqueous cleaning compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise at least one polar organic solvent, at least one hydroxylated organic amine, and at least one corrosion inhibitor polymer having multiple hydroxyl- or amino-functional groups pendant from the polymer backbone.

1 . A non-aqueous cleaning composition for cleaning photoresist and residues from microelectronic substrates, said cleaning composition consisting essentially of:
 about 80% or more by weight of the composition of one or more polar organic solvents,   about 1% to about 15% by weight of the composition of one or more organic alkanolamines,   and about 0.3% to about 10% by weight of the composition of one or more corrosion inhibitor polymer having multiple functional groups pendant from the polymer backbone and wherein the functional pendant groups are selected from amino and hydroxyl groups.   
     
     
         2 . The cleaning composition of  claim 1  wherein the polar organic solvent is selected from the group consisting of sulfolane, 3-methylsulfolane, n-propyl sulfone, dimethyl sulfoxide, methyl sulfone, n-butyl sulfone, sulfolane, 3-methylsulfolane, 1-(2-hydroxyethyl)-2-pyrrolidone, dimethylpiperidone, N-methyl-2-pyrrolidone, dimethylacetamide and dimethylformamide. 
     
     
         3 . The cleaning composition of  claim 1  wherein the alkanolamine is selected from the group consisting of monoethanolamine, diethanolamone, triethanolamine, 2-aminoethanol, 1-amino-2-propanol, 1-amino-3-propanol, 2-(2-aminoethoxy)ethanol, 2-(2-aminoethylamino)ethanol, and 2-(2-aminoethylamino)ethylamine and mixtures thereof. 
     
     
         4 . A cleaning composition of  claim 3  wherein the alkanolamine is selected from the group consisting of diethanolamine, and 1-amino-2-propanol. 
     
     
         5 . A cleaning composition according to  claim 1  wherein the organic polar solvent is selected from the group consisting of N-methyl pyrrolidone, sulfolane dimethyl sulfoxide and mixtures thereof, the alkanolamine is selected from the group consisting of diethanolamine, and 1-amino-2-propanol and the corrosion inhibiting polymer is polyethyleneimine. 
     
     
         6 . A cleaning composition according to  claim 1  wherein the polymeric corrosion inhibitor is polyethyleneimine. 
     
     
         7 . A cleaning composition according to  claim 1  consisting essentially of N-methyl pyrrolidone, sulfolane, dimethyl sulfoxide, 1-amino-2-propanol and polyethyleneimine. 
     
     
         8 . A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist or residue from the substrate, wherein the cleaning composition comprises a composition of  claim 1 . 
     
     
         9 . A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist or residue from the substrate, wherein the cleaning composition comprises a composition of  claim 2 . 
     
     
         10 . A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist or residue from the substrate, wherein the cleaning composition comprises a composition of  claim 3 . 
     
     
         11 . A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist or residue from the substrate, wherein the cleaning composition comprises a composition of  claim 4 . 
     
     
         12 . A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist or residue from the substrate, wherein the cleaning composition comprises a composition of  claim 5 . 
     
     
         13 . A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist or residue from the substrate, wherein the cleaning composition comprises a composition of  claim 6 . 
     
     
         14 . A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist or residue from the substrate, wherein the cleaning composition comprises a composition of  claim 7 . 
     
     
         15 . A process according to  claim 8  wherein the microelectronic substrate to be cleaned is characterized by the presence of copper metallization. 
     
     
         16 . A process according to  claim 12  wherein the microelectronic substrate to be cleaned is characterized by the presence of copper metallization. 
     
     
         17 . A process according to  claim 14  wherein the microelectronic substrate to be cleaned is characterized by the presence of copper metallization.