Thin film solar cell and manufacturing method thereof

Abstract

A thin film solar cell including a substrate, a first conductive layer, a photoelectric conversion layer, a second conductive layer and a passivation layer is provided. The first conductive layer disposed on the substrate has a plurality of first openings, so as to divide the first conductive layer into bottom electrodes of a plurality of photovoltaic elements. The photoelectric conversion layer disposed on the first conductive layer has a plurality of second openings. The second conductive layer is disposed on the photoelectric conversion layer and electrically connected to the first conductive layer through the second openings. The passivation layer is disposed on the sidewall of the photoelectric conversion layer, so that the second conductive layer in the second openings is electrically isolated from the photoelectric conversion layer. A manufacturing method of the thin film solar cell is also provided.

1 . A thin film solar cell, comprising:
 a substrate;   a first conductive layer, disposed on the substrate, and having a plurality of first openings so that the first conductive layer is divided into bottom electrodes of a plurality photovoltaic elements;   a photoelectric conversion layer, disposed on the first conductive layer and having a plurality of second openings to expose a portion of the first conductive layer;   a second conductive layer, disposed on the photoelectric conversion layer and connected to the first conductive layer through the second openings, wherein the second conductive layer has a plurality of third openings to exposed a portion of the first conductive layer; and   a passivation layer, disposed on a sidewall of each second opening and between the photoelectric conversion layer and the second conductive layer, so that the second conductive layer in the second openings is electrically isolated from the photoelectric conversion layer.   
     
     
         2 . The thin film solar cell of  claim 1 , wherein a thickness of the passivation layer is substantially between 0.1 nm and 10 nm. 
     
     
         3 . The thin film solar cell of  claim 2 , wherein the thickness of the passivation layer is substantially between 1 nm and 5 nm. 
     
     
         4 . The thin film solar cell of  claim 1 , wherein a material of the passivation layer comprises a dielectric material, an insulating material or a compound material containing oxygen or nitrogen. 
     
     
         5 . The thin film solar cell of  claim 4 , wherein the material of the passivation layer comprises silicon oxide, silicon nitride or silicon oxynitride. 
     
     
         6 . The thin film solar cell of  claim 1 , wherein the photoelectric conversion layer comprises a first-type semiconductor layer and a second-type semiconductor layer. 
     
     
         7 . The thin film solar cell of  claim 1 , wherein the photoelectric conversion layer comprises a double-layer photoelectric conversion layer, a triple-layer photoelectric conversion layer or a stacked structure of more than three photoelectric conversion layers. 
     
     
         8 . The thin film solar cell of  claim 1 , wherein the first conductive layer is a transparent conductive layer, and the second conductive layer comprises at least one of a reflective layer and a transparent conductive layer. 
     
     
         9 . The thin film solar cell of  claim 1 , wherein the second conductive layer is a transparent conductive layer, and the first conductive layer comprises at least one of a reflective layer and a transparent conductive layer. 
     
     
         10 . A manufacturing method of a thin film solar cell, comprising:
 providing a substrate;   forming a first conductive layer on the substrate;   forming a plurality of first openings in the first conductive layer, so that the first conductive layer is divided to bottom electrodes of a plurality of photovoltaic elements;   forming a photoelectric conversion layer on the first conductive layer;   forming a plurality of second openings in the photoelectric conversion layer to expose a portion of the first conductive layer;   forming a passivation layer on sidewalls of the second openings; and   forming a second conductive layer on the photoelectric conversion layer, wherein the second conductive layer is connected to the first conductive layer through the second openings, and the second conductive layer has a plurality of third openings to expose a portion of the first conductive layer, wherein the passivation layer is disposed between the photoelectric conversion layer and the second conductive layer, so that the second conductive layer in the second openings is electrically isolated from the photoelectric conversion layer.   
     
     
         11 . The manufacturing method of  claim 10 , wherein a method of forming the passivation layer comprises forming a native oxide layer of the photoelectric conversion layer or performing a plasma treatment to the photoelectric conversion layer. 
     
     
         12 . The manufacturing method of  claim 10 , wherein a method of forming the first openings, the second openings or the third openings comprises performing a laser process, an etching process or a removing process using mechanical force. 
     
     
         13 - 27 . (canceled)