Semiconductor power device having a stacked discrete inductor structure

Abstract

A power device includes a discrete inductor having contacts formed on a first surface of the discrete inductor and at least one semiconductor component mounted on the first surface of the discrete inductor and coupled to the contacts. The discrete inductor further includes contacts formed on a second surface opposite the first surface and routing connections connecting the first surface contacts to corresponding second surface contacts. The semiconductor components may be flip chip mounted onto the discrete inductor contacts or wire bonded thereto.

1 - 37 . (canceled) 
     
     
         38 . A method of manufacturing a semiconductor power device comprising:
 providing a discrete inductor;   forming a plurality of contacts on a first surface of the discrete inductor;   mounting at least one semiconductor component on the first surface of the discrete inductor; and   coupling the at least one semiconductor component to the plurality of contacts on the first surface.   
     
     
         39 . The method of  claim 38 , further comprising forming a plurality of second contacts on a second surface opposite the first surface; and
 further comprising connecting the first surface contacts to the second contacts by routing connections.   
     
     
         40 . The method of  claim 39 , further comprising connecting the first surface contacts to the second contacts by the routing connections;
 further comprising forming the routing connections on a surface of the discrete inductor; and   further comprising wrapping the routing connections around a periphery of the discrete inductor.   
     
     
         41 . The method of  claim 39 , further comprising connecting the first surface contacts to the second contacts by a plurality of routing connections that comprise through vias. 
     
     
         42 . The method of  claim 39 , further comprising connecting the first surface contacts to the second contacts by a plurality of the routing connections that comprise AgNiSn, and further comprising providing AgNiSn as at least one of the first and the second contacts. 
     
     
         43 . The method of  claim 38 , further comprising providing a Schottky diode and a control circuitry and further comprising assembling the discrete inductor and the semiconductor component as a boost power converter. 
     
     
         44 . The method of  claim 43 , further comprising flip chip mounting the Schottky diode and the control circuitry to the contacts. 
     
     
         45 . The method of  claim 43 , further comprising wire bonding the Schottky diode and the control circuitry to the contacts. 
     
     
         46 . The method of  claim 38 , wherein mounting the at least one semiconductor component further comprises mounting a power integrated circuit on the first surface of the discrete inductor; and further comprising assembling the discrete inductor and the semiconductor component as a buck power converter. 
     
     
         47 . The method of  claim 46 , wherein mounting the power integrated circuit further comprises flip chip mounting the power integrated circuit to the contacts. 
     
     
         48 . The method of  claim 46 , wherein mounting the power integrated circuit further comprises wire bonding the power integrated circuit to the contacts. 
     
     
         49 . The method of  claim 38 , further comprising providing a surface mount wire-wound discrete inductor as the discrete inductor. 
     
     
         50 . The method of  claim 38 , further comprising providing a multi-layer discrete inductor as the discrete inductor. 
     
     
         51 . The method of  claim 38 , further comprising covering the at least one semiconductor component with an encapsulant, and covering the first surface contacts with the encapsulant. 
     
     
         52 . The method of  claim 38 , further comprising forming a patterned contact on the first surface of the discrete inductor, and connecting a first contact to a second contact on the first surface. 
     
     
         53 . The method of  claim 52 , further comprising connecting the first contact to the semiconductor component using a small solder ball;
 further comprising forming a large solder ball on the second contact; and   further comprising arranging the large solder ball so that the large solder ball is substantially coplanar to a surface of the semiconductor component.   
     
     
         54 . The method of  claim 53 , further comprising exposing said surface of the semiconductor component facing away from the discrete inductor, and further comprising mounting said surface to a printed circuit board. 
     
     
         55 . The method of  claim 38 , wherein forming a plurality of contacts on a first surface of the discrete inductor further comprises electroplating said contacts onto said first surface. 
     
     
         56 . A method comprising:
 providing a discrete inductor; and   forming contacts on a first surface of the inductor such that said contacts form a lead frame for electrically connecting a semiconductor integrated circuit to said lead frame.   
     
     
         57 . A method of manufacturing a semiconductor power device comprising:
 providing a discrete inductor; and   forming a plurality of contacts on a first surface of the discrete inductor such that said contacts further include a ball grid array for flip chip mounting a semiconductor component on the ball grid array.