Heating Configuration For Use in Thermal Processing Chambers

Abstract

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

1 - 25 . (canceled) 
     
     
         26 . An apparatus for heat treating semiconductor substrates, the apparatus comprising:
 a thermal processing chamber adapted to contain a semiconductor substrate;   a first radiant heating device configured to heat a semiconductor substrate in the chamber during processing; and   a second heating device comprising at least one tuning device built into a side of the chamber that emits radiant light energy.   
     
     
         27 . The apparatus set forth in  claim 26 , wherein the tuning device is configured to irradiate a semiconductor substrate contained in the chamber. 
     
     
         28 . The apparatus as set forth in  claim 27 , wherein the tuning device is positioned such that the device irradiates a semiconductor substrate at an angle of incidence that is at or near the Brewster angle for a material comprising the semiconductor substrate. 
     
     
         29 . The apparatus set forth in  claim 28 ,
 wherein the semiconductor substrate comprises silicon; and   wherein the angle of incidence is about 75 degrees.   
     
     
         30 . The apparatus set forth in  claim 26 , wherein the at least one tuning device is positioned so that at feast some light energy impinges on an edge region of a semiconductor substrate contained in the chamber. 
     
     
         31 . The apparatus set forth in  claim 30 , wherein the at least one tuning device comprises a laser and is configured so that the light energy impinging on the edge of the semiconductor substrate impinges at an angle of incidence of about 75 degrees and is in a p-polarized or near a p-polarized state. 
     
     
         32 . The apparatus as set forth in  claim 26 , wherein the tuning device emits a laser beam that delivers power of greater than 10 watts. 
     
     
         33 . The apparatus as set forth in  claim 28 , wherein the tuning device emits a laser beam that delivers power of greater than 10 watts. 
     
     
         34 . The apparatus as set forth in  claim 26 , further comprising a wafer support configured to support a semiconductor substrate in the thermal processing chamber. 
     
     
         35 . The apparatus as set forth in  claim 34 , wherein the wafer support is further configured to rotate a semiconductor substrate in the thermal processing chamber. 
     
     
         36 . An apparatus as set forth in  claim 26 , wherein the apparatus includes a plurality of tuning devices built into the side of the chamber. 
     
     
         37 . An apparatus as set forth in  claim 26 , wherein the radiant heating device comprises a plurality of linear lamps. 
     
     
         38 . An apparatus as set forth in  claim 26 , wherein the at least one tuning device comprises an arc lamp. 
     
     
         39 . An apparatus as set forth in  claim 26 , further comprising a temperature sensing device for sensing a temperature of a semiconductor substrate contained within the thermal processing chamber, the apparatus further comprising a controller in communication with the temperature sensing device, the controller configured to control the at least one tuning device based upon information received from the temperature sensing device. 
     
     
         40 . An apparatus for heat treating semiconductor substrates, the apparatus comprising:
 a thermal processing chamber adapted to contain a semiconductor substrate;   a first radiant heating device configured to heat a semiconductor substrate in the chamber during processing;   a slip-free ring positioned within the thermal processing chamber; and   a second heating device comprising at least one tuning device built into a side of the chamber that emits radiant light energy.   
     
     
         41 . The apparatus as set forth in  claim 40 , wherein the tuning device emits a laser beam that delivers power of greater than 10 watts. 
     
     
         42 . The apparatus as set forth in  claim 40 , further comprising a wafer support configured to support and rotate a wafer in the thermal processing chamber. 
     
     
         43 . An apparatus as set forth in  claim 40 , wherein the radiant heating device comprises a plurality of linear lamps. 
     
     
         44 . An apparatus as set forth in  claim 40 , wherein the at least one tuning device comprises an arc lamp. 
     
     
         45 . An apparatus as set forth in  claim 40 , further comprising a temperature sensing device for sensing a temperature of a semiconductor substrate contained within the thermal processing chamber, the apparatus further comprising a controller in communication with the temperature sensing device, the controller configured to control the at least one tuning device based upon information received from the temperature sensing device.