US2011230044A1PendingUtilityA1

Contact structure having a compliant bump and a testing area and manufacturing method for the same

Assignee: TAIWAN TFT LCD ASSPriority: Jul 28, 2006Filed: Jun 1, 2011Published: Sep 22, 2011
Est. expiryJul 28, 2026(~0 yrs left)· nominal 20-yr term from priority
H10W 72/9415H10W 72/952H10W 72/923H10W 72/922H10W 72/251H10W 72/221H10W 72/247H10W 72/248H10W 72/244H10W 72/234H10W 72/20
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Claims

Abstract

A contact structure having both a compliant bump and a testing area and a manufacturing method for the same is introduced. The compliant bump is formed on a conductive contact of the silicon wafer or a printed circuit board. The core of the bump is made of polymeric material, and coated with a conductive material. In particular, the compliant bump is disposed on the one side of the conductive contact structure that includes both the bump and the testing area, wherein the testing area allows the area to be functionality tested, so as to prevent damage of the coated conductive material over the compliant bump during a probe testing.

Claims

exact text as granted — not AI-modified
1 . A manufacturing method of a contact structure having a compliant bump and a testing area, comprising:
 1) preparing a substrate having at least the contact structure;   2) coating a polymeric material upon the contact structure;   3) developing/etching the polymeric material so as to form one or more than one of the plurality of compliant bumps and the testing area on the contact structure; and   4) covering a conductive material, the compliant bump forms a conductive bump;
 whereby, the conductive bump electrically connects with the testing area by means of the conductive layer, so the testing area conducts the conductive bump. 
   
     
     
         2 . The manufacturing method of  claim 1 , wherein the substrate is an organic or inorganic material such as ceramic, metal, glass, polymeric or silicon. 
     
     
         3 . A manufacturing method of a contact structure having a compliant bump and a testing area, comprising:
 1) preparing a silicon wafer having a metal pad as an input/output terminal, and a passivation layer which is used to protect the body of the wafer;   2) coating a polymeric material upon the silicon wafer;   3) developing/etching the polymeric material so as to form one or more than one of the plurality of compliant bumps and the teqting area on the metal pad; and   4) covering a conductive material on the testing area of the compliant bump which forms a conductive bump;
 whereby, the conductive bump electrically connects with the testing area by means of the conductive layer, so the testing area conducts the conductive bump.

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