REACTIVE CODOPING OF GaAlInP COMPOUND SEMICONDUCTORS

Abstract

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phosphine gas, Zn vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and group VIB vapors produce a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

1 . A GaAlInP compound semiconductor, the GaAlInP compound semiconductor comprising:
 a substrate, the substrate being a GaAs single crystal positioned within a metal organic chemical vapor deposition (MOCVD) reactor;   Al, Ga, In vapors thermally decomposed from organometallic compounds of Al, Ga, and In;   P vapors thermally decomposed phosphine gas;   Group II vapors thermally decomposed from an organometallic group IIA or IIB compound; and   group VIB vapors thermally decomposed from a gaseous compound of group VIB, the Al, Ga, In, P, group II, and group VIB vapors being applied to a region for epitaxial crystal growth on the substrate;   wherein the group IIA or IIB and group VIB produce a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion at an atomic ratio of II:VI greater than approximately two (2) in the GaAlInP crystal.   
     
     
         2 . The GaAlInP compound semiconductor of  claim 1  wherein the metal organic chemical vapor deposition (MOCVD) reactor has a gas switching manifold and the Al, Ga, In vapors are prepared in the gas switching manifold. 
     
     
         3 . The GaAlInP compound semiconductor of  claim 1  wherein the metal organic chemical vapor deposition (MOCVD) reactor has a gas switching manifold and the group II vapors are prepared in the gas switching manifold. 
     
     
         4 . The GaAlInP compound semiconductor of  claim 1  wherein the metal organic chemical vapor deposition (MOCVD) reactor has a gas switching manifold and the P vapors being prepared in the gas switching manifold. 
     
     
         5 . The GaAlInP compound semiconductor of  claim 1  wherein the metal organic chemical vapor deposition (MOCVD) reactor has a gas switching manifold and the group VIB vapors being prepared in the gas switching manifold. 
     
     
         6 . The GaAlInP compound semiconductor of  claim 1  wherein the metal organic chemical vapor deposition (MOCVD) reactor has a reaction chamber and a susceptor positioned within the reaction chamber with the substrate being positioned on the susceptor. 
     
     
         7 . The GaAlInP compound semiconductor of  claim 6  wherein the substrate is heated to a temperature of between approximately 500° C. and 650° C. 
     
     
         8 . The GaAlInP compound semiconductor of  claim 1  wherein the sources are selected from the group consisting of AsH 3 , PH 3 , H 2 Se, and Si 2 H 6 . 
     
     
         9 . The GaAlInP compound semiconductor of  claim 1  wherein the organometallic compounds are organometallic sources selected from the group consisting of trimethylaluminum (TMAI), triethylgallium (TEGa), trimethylindium (TMIn), and an organometallic compound of group IIA or group IIB.