Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device has a semiconductor substrate including a light receiving element, a silicon oxide film formed on the semiconductor substrate, a plurality of wiring interlayer films formed on the silicon oxide film, and each including a wiring layer formed as the result of the fact that copper is buried, and a silicon nitride film formed on the wiring interlayer film of the uppermost layer wherein Si—H concentration is smaller than N—H concentration.

1 . A semiconductor device comprising:
 a semiconductor substrate including a light receiving element;   an interlayer insulating film formed on the semiconductor substrate;   a plurality of wiring interlayer films formed on the interlayer insulating film, and each including a wiring layer formed as the result of the fact that copper is buried; and   a silicon nitride film formed on the wiring interlayer film of the uppermost layer wherein Si—H concentration is smaller than N—H concentration,   wherein a film thickness of the silicon nitride film falls within the range from 110 nm to 140 nm.   
     
     
         2 . The semiconductor device according to  claim 1 ,
 wherein the silicon nitride film is formed within at least an upper area of the light receiving element.   
     
     
         3 . The semiconductor device according to  claim 2 ,
 wherein the silicon nitride film formed within an upper area of the light receiving element comprises two-layered silicon nitride film.   
     
     
         4 . The semiconductor device according to  claim 1 ,
 wherein the silicon nitride film is formed within an upper area of the light receiving element, and the silicon nitride film is thinner than a second silicon nitride film formed above a peripheral circuit part.   
     
     
         5 . The semiconductor device according to  claim 1 , further comprising:
 a planarization film formed within at least an upper area of the light receiving element on the silicon nitride film;   a color filter formed on the planarization film; and   a microlens formed on the color filter.   
     
     
         6 - 13 . (canceled)