Semiconductor device and manufacturing method thereof

Abstract

An upper module board on which an integrated chip component with a low upper temperature limit is mounted and a lower module board on which a heat-generating semiconductor chip, a single chip component and an integrated chip component are mounted are electrically and mechanically connected via a plurality of conductive connecting members, and these are sealed together with mold resin. In such a circumstance, a shield layer made up of a stacked film of a Cu plating film and a Ni plating film is formed on side surfaces of the upper and lower module boards and surfaces (upper and side surfaces) of the mold resin, thereby realizing the electromagnetic wave shield structure.

1 . A semiconductor device comprising:
 a first circuit board in which a wiring layer in a part of an inner-layer wiring is used as a ground wiring;   a plurality of first mounted components mounted on a first component mounting surface of the first circuit board;   a second circuit board stacked on the first component mounting surface of the first circuit board;   a plurality of second mounted components mounted on a second component mounting surface of the second circuit board;   a plurality of connecting members which mechanically and electrically connect the first circuit board and the second circuit board; and   first resin which seals the first circuit board, the second circuit board, the plurality of first mounted components and the plurality of second mounted components together,   wherein the plurality of first mounted components include a first component which generates heat, the plurality of second mounted components include a second component whose characteristics are changed by the heat generated from the first component, and the first component and the second component are disposed so as to be thermally separated.   
     
     
         2 . The semiconductor device according to  claim 1 ,
 wherein each of the plurality of connecting members is columnar metal, a solder ball having a core made of copper or resin, metal with a planar netlike shape, porous metal, a first pin which has a spring mechanism and is inserted into at least one of the first circuit board and the second circuit board to be fixed by the spring mechanism, or a second pin which is inserted into at least one of the first circuit board and the second circuit board to be fixed by solder.   
     
     
         3 . The semiconductor device according to  claim 1 , further comprising:
 a shield member which is electrically connected to the ground wiring and shields the first circuit board, the second circuit board, the plurality of first mounted components and the plurality of second mounted components from electromagnetic waves from outside.   
     
     
         4 . The semiconductor device according to  claim 1 ,
 wherein the plurality of first mounted components and the plurality of second mounted components are made up of one or more semiconductor chips and one or more chip components,   the semiconductor chip has a front surface and a rear surface on a reverse side of the front surface and a plurality of protruding electrodes connected to the first circuit board or the second circuit board are formed on the front surface, and   the semiconductor chip is mounted with the front surface thereof being faced with the first circuit board or the second circuit board.   
     
     
         5 . The semiconductor device according to  claim 1 ,
 wherein the plurality of first mounted components and the plurality of second mounted components are made up of one or more semiconductor chips and one or more chip components,   the semiconductor chip has a front surface and a rear surface on a reverse side of the front surface and is mounted with the rear surface thereof being faced with the first circuit board or the second circuit board, and   a plurality of wires for electrically connecting the semiconductor chip and the first circuit board or the second circuit board are provided.   
     
     
         6 . A semiconductor device comprising:
 a first circuit board in which a wiring layer in a part of an inner-layer wiring is used as a ground wiring;   a plurality of first mounted components mounted on a first component mounting surface of the first circuit board;   a second circuit board stacked on the first circuit board;   a plurality of second mounted components mounted on a second component mounting surface of the second circuit board; and   a plurality of connecting members which mechanically and electrically connect the first circuit board and the second circuit board,   wherein the plurality of first mounted components include a first component which generates heat, the plurality of second mounted components include a second component whose characteristics are changed by the heat generated from the first component, and the first component and the second component are disposed so as to be thermally separated,   the plurality of first mounted components and the plurality of second mounted components are made up of one or more semiconductor chips and one or more chip components,   the semiconductor chip has on its front surface a plurality of protruding electrodes connected to the first circuit board or the second circuit board,   the semiconductor chip is mounted with the front surface thereof, being faced with the first circuit board or the second circuit board, and   a space between the semiconductor chip and the first circuit board or the second circuit board is sealed with second resin.   
     
     
         7 . The semiconductor device according to  claim 6 , further comprising:
 a shield member which is electrically connected to the ground wiring and shields the first circuit board, the second circuit board, the plurality of first mounted components and the plurality of second mounted components from electromagnetic waves from outside.   
     
     
         8 . A semiconductor device comprising:
 a first circuit board;   a plurality of first mounted components mounted on a first component mounting surface of the first circuit board;   a second circuit board which is stacked on the first component mounting surface of the first circuit board and in which a wiring layer in a part of an inner-layer wiring is used as a ground wiring;   a plurality of second mounted components mounted on a second component mounting surface of the second circuit board;   a plurality of connecting members which mechanically and electrically connect the first circuit board and the second circuit board; and   first resin which seals the first circuit board, the second circuit board, the plurality of first mounted components and the plurality of second mounted components together,   wherein the plurality of first mounted components include a first component which generates heat, the plurality of second mounted components include a second component whose characteristics are changed by the heat generated from the first component, and the first component and the second component are disposed so as to be thermally separated.   
     
     
         9 . The semiconductor device according to  claim 8 , further comprising:
 a shield member which is electrically connected to the ground wiring and shields the first circuit board, the second circuit board, the plurality of first mounted components and the plurality of second mounted components from electromagnetic waves from outside.   
     
     
         10 . A semiconductor device comprising:
 a first circuit board;   a plurality of first mounted components mounted on a first component mounting surface of the first circuit board;   a second circuit board which is stacked on the first circuit board and in which a wiring layer in a part of an inner-layer wiring is used as a ground wiring;   a plurality of second mounted components mounted on a second component mounting surface of the second circuit board; and   a plurality of connecting members which mechanically and electrically connect the first circuit board and the second circuit board,   wherein the plurality of first mounted components include a first component which generates heat, the plurality of second mounted components include a second component whose characteristics are changed by the heat generated from the first component, and the first component and the second component are disposed so as to be thermally separated,   the plurality of first mounted components and the plurality of second mounted components are made up of one or more semiconductor chips and one or more chip components,   the semiconductor chip has on its front surface a plurality of protruding electrodes connected to the first circuit board or the second circuit board,   the semiconductor chip is mounted with the front surface thereof being faced with the first circuit board or the second circuit board, and   a space between the semiconductor chip and the first circuit board or the second circuit board is sealed with second resin.   
     
     
         11 . A manufacturing method of a semiconductor device comprising the steps of:
 (a) preparing a first board base in which a wiring layer in a part of an inner-layer wiring is used as a ground wiring and one or more structures including a heat dissipation via, a heat dissipation metal body and a heat dissipation metal core layer are formed in a first circuit board, the first board base being partitioned into a plurality of the first circuit boards;   (b) mounting a plurality of first mounted components on a first component mounting surface of the first circuit board;   (c) preparing a second board base partitioned into a plurality of second circuit boards each having the same planar shape as that of the first circuit board;   (d) mounting a plurality of second mounted components on a second component mounting surface of the second circuit board;   (e) after the step (b) and after the step (d), mechanically and electrically connecting the first board base and the second board base via a plurality of connecting members so that the second circuit board is stacked on the first component mounting surface of the first circuit board;   (f) after the step (e), sealing the first board base, the second board base, the plurality of first mounted components and the plurality of second mounted components together with first resin;   (g) dicing the first resin, the first board base and the second board base along the shape of the first circuit board and the second circuit board until the first board base is partially cut in a thickness direction, thereby forming trenches having side surfaces on which the ground wirings are exposed;   (h) forming a metal shield member so as to cover the side surfaces of the trenches and the first resin and come into contact with the ground wirings; and   (i) after the step (h), dicing the remaining first base body along the trenches, thereby dividing it into individual semiconductor devices.   
     
     
         12 . The manufacturing method of the semiconductor device according to  claim 11 ,
 wherein the shield member is formed by a plating method.   
     
     
         13 . The manufacturing method of the semiconductor device according to  claim 11 ,
 wherein the plurality of connecting members are made of porous metal.   
     
     
         14 . A manufacturing method of a semiconductor device comprising the steps of:
 (a) preparing a first board base in which a wiring layer in a part of an inner-layer wiring is used as a ground wiring and one or more structures including a heat dissipation via, a heat dissipation metal body and a heat dissipation metal core layer are formed in a first circuit board, the first board base being partitioned into a plurality of the first circuit boards;   (b) mounting a plurality of first mounted components on a first component mounting surface of the first circuit board;   (c) preparing a second board base partitioned into a plurality of second circuit boards each having the same planar shape as that of the first circuit board;   (d) mounting a plurality of second mounted components on a second component mounting surface of the second circuit board;   (e) after the step (b) and after the step (d), mechanically and electrically connecting the first board base and the second board base via a plurality of connecting members so that the second circuit board is stacked on the first component mounting surface of the first circuit board;   (f) dicing the first board base and the second board base along the shape of the first circuit board and the second circuit board, thereby dividing them into individual semiconductor devices; and   (g) attaching a shield member having a cap shape, which covers side and upper surfaces of each semiconductor device and is electrically connected to the ground wiring, to each of the semiconductor devices,   wherein the plurality of first mounted components and the plurality of second mounted components are made up of one or more semiconductor chips and one or more chip components,   the semiconductor chip has on its front surface a plurality of protruding electrodes connected to the first circuit board or the second circuit board,   the semiconductor chip is mounted with the front surface thereof being faced with the first circuit board or the second circuit board,   in the step (b) and the step (d), a space between the semiconductor chip and the first circuit board or the second circuit board is sealed with second resin, and   the shield member has protrusions to be in contact with side surfaces of each individual semiconductor device, and the protrusions come into contact with the ground wiring exposed on the side surface of each individual semiconductor device.