US2011252850A1PendingUtilityA1
Method and device of enhancing diffusibility of metallic surfaces and applications thereof
Est. expiryApr 14, 2030(~3.7 yrs left)· nominal 20-yr term from priority
Inventors:Jian Lu
A61F 2/30767C21D 7/06C21D 2201/03C21D 2221/00A61F 2002/30922A61L 2400/18A61F 2002/3084
37
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Claims
Abstract
A method for increasing diffusibility of metallic surfaces and its applications in surface treatment of metallic implants, which combines a mechanic means and a chemical means, whereby the mechanic means increases the diffusibility of the surface while the chemical means forms a chemically modified surface layer for improved properties suitable for particular application of the metallic materials, especially in the bio-medical areas. This surface treatment can increase the hardness and corrosion resistance of stainless steel and reduces Ni release from implants made from NiTi wires.
Claims
exact text as granted — not AI-modified1 . A method of enhancing diffusibility of a metallic surface, comprising a step of generating crystalline surface structure by surface mechanical attrition treatment.
2 . A device for generating nanostructures in a given thickness on metallic implants comprises a working chamber that can be divided into multiple rooms, means for setting in motion a given quantity of perfectly spherical balls of given dimension at a given speed in each room for a given duration, means for reusing the balls continuously in each room, and means for mounting and rotating the implants at a given speed to obtain variable angles of incidence at the same impact point, so that the impact points as a group cover the entire surface of the implant.
3 . The device for generating nanostructures in a given thickness on metallic implants according to claim 2 , further comprises fences to separate the rooms of the working chamber.
4 . The device for generating nanostructures in a given thickness on metallic implants according to claim 3 , at least one room has adjustable roof height.
5 . The device for generating nanostructures in a given thickness on metallic implants according to claim 4 , further comprises an ultrasonic generator at the bottom of each room to set the balls in motion, causing the balls to move in random directions.
6 . The device for generating nanostructures in a given thickness on metallic implants according to claim 4 , further comprises the sloping floor of each room to reuse the balls.
7 . The device for generating nanostructures in a given thickness on metallic implants according to claim 6 , in which the implants are intramedullary nails, bone plates, artificial hip joints, etc made of stainless steel, and NiTi wires.
8 . The device for generating nanostructures in a given thickness on metallic implants according to claim 6 , further comprises clamps or other fixtures to fix the implants, which are mounted in the tubes driven by a motor through gears at a rotation speed between 0.5 rpm and 5 rpm.
9 . The device for generating nanostructures in a given thickness on metallic implants according to claim 6 , further comprises fixtures to move NiTi wires in a linear speed between 10 cm/min and 40 cm/min.
10 . The device for generating nanostructures in a given thickness on metallic implants according to claim 6 , in which the perfectly spherical balls are made of stainless steel or zirconia with diameter, depending on the thickness of the nanostructures desired by the user, being 0.3 mm to 3 mm.
11 . The device for generating nanostructures in a given thickness on metallic implants according to claim 6 , in which the balls are of a quantity such that, when the means for setting them in motion using ultrasound are inactive, they occupy a surface area greater than 30% of the surface of the sonotrode.
12 . The device for generating nanostructures in a given thickness on metallic implants according to claim 6 , in which the ball speed is between 5 mps and 100 mps.
13 . The device for generating nanostructures in a given thickness on metallic implants according to claim 6 , in which the projection time, determined based on the nanostructured layer thickness desired by the user for a given ball size and a given material constituting the implant with given size, is between 30 s and 1800 s.
14 . The device for generating nanostructures in a given thickness on metallic implants according to claim 13 , further comprises means for adjusting the emission time of the balls.
15 . The device for generating nanostructures in a given thickness on metallic implants according to claim 6 , in which the distance between the emission source of the balls and the implant being treated is between 20 mm and 80 mm.
16 . The device for generating nanostructures in a given thickness on metallic implants according to claim 15 , further comprises means for adjusting the distance.
17 . The device for generating nanostructures in a given thickness on metallic implants according to claim 6 , further comprises means for performing a local cooling of the treated area of the implant.
18 . The device for generating nanostructures in a given thickness on metallic implants according to claim 6 , in which the projection step is performed after the chamber has been filled with inert gas.
19 . The device for generating nanostructures in a given thickness on metallic implants according to claim 5 , which is enclosed in a vacuum cabinet.Join the waitlist — get patent alerts
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