US2011271905A1PendingUtilityA1

Methods and System for Processing a Microelectronic Topography

Assignee: LAM RES CORPPriority: Jun 16, 2003Filed: Jul 19, 2011Published: Nov 10, 2011
Est. expiryJun 16, 2023(expired)· nominal 20-yr term from priority
H10P 72/0424H10P 72/0414H10P 72/7608Y02P80/30
53
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Claims

Abstract

Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.

Claims

exact text as granted — not AI-modified
1 . A microelectronic processing chamber, comprising:
 a platen configured to hold a wafer;   a fluid inlet configured to supply fluid to the wafer; and   a means for agitating the fluid within the chamber, wherein the means for agitating the fluid comprises a brush and a means for moving the brush at a level spaced apart from the wafer.   
     
     
         2 . The microelectronic processing chamber of  claim 1 , wherein the means for agitating the fluid is configured to create laminar agitation within the fluid. 
     
     
         3 . The microelectronic processing chamber of  claim 1 , wherein the microelectronic processing chamber is a film deposition chamber. 
     
     
         4 . The microelectronic processing chamber of  claim 3 , wherein the film deposition chamber is an electroless plating chamber. 
     
     
         5 . The microelectronic processing chamber of  claim 3 , wherein the means for moving the brush is configured to move the brush while a film is being deposited on the wafer. 
     
     
         6 . The microelectronic processing chamber of  claim 1 , wherein the fluid inlet is a moveable dispense arm, and wherein the brush is disposed on the moveable dispense arm. 
     
     
         7 . A system comprising a chamber for processing a microelectronic topography, wherein the chamber comprises:
 a platen configured to hold a wafer;   a fluid inlet configured to supply fluid to the wafer;   structural components demarcating a fluid accumulation region above the wafer; and   a brush, wherein the system is configured to move the brush through the fluid accumulation region at a level spaced apart from the wafer.   
     
     
         8 . The system of  claim 7 , wherein the system is configured to move the brush in a manner which creates laminar agitation within the fluid. 
     
     
         9 . The system of  claim 7 , wherein the chamber is a film deposition chamber. 
     
     
         10 . The system of  claim 9 , wherein the film deposition chamber is an electroless plating chamber. 
     
     
         11 . The system of  claim 9 , wherein the system is configured to move the brush while a film is being deposited on the wafer. 
     
     
         12 . The system of  claim 7 , wherein the fluid inlet is a moveable dispense arm, and wherein the brush is disposed on the moveable dispense arm. 
     
     
         13 . A film deposition chamber, comprising:
 a platen configured to hold a substrate; and   a brush, wherein the chamber is configured to move the brush at a level spaced apart from the substrate while a deposition process is performed in the chamber.   
     
     
         14 . The film deposition chamber of  claim 13 , wherein the film deposition chamber is an electroless plating chamber. 
     
     
         15 . The film deposition chamber of  claim 13 , wherein the film deposition chamber is a microelectronic topography processing chamber, and wherein the platen is configured to hold a wafer. 
     
     
         16 . The film deposition chamber of  claim 13 , wherein the brush is disposed on a moveable fluid dispense device which is configured for arrangement above the substrate.

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