Photovoltaic thin-film cell produced from metallic blend using high-temperature printing

Abstract

The metallic components of a IB-IIIA-VIA photovoltaic cell active layer may be directly coated onto a substrate by using relatively low melting point (e.g., less than about 500° C.) metals such as indium and gallium. Specifically, CI(G)S thin-film solar cells may be fabricated by blending molten group IIIA metals with solid nanoparticles of group IB and (optionally) group IIIA metals. The molten mixture may be coated onto a substrate in the molten state, e.g., using coating techniques such as hot-dipping, hot microgravure and/or air-knife coating. After coating, the substrate may be cooled and the film annealed, e.g., in a sulfur-containing or selenium-containing atmosphere.

1 . A method for forming an active layer coating, the method comprising the steps of:
 forming a molten mixture of one or more metals of group IIIA and metallic nanoparticles containing elements of group IB; and   coating a substrate with a film formed from the molten mixture.   
     
     
         2 . A photovoltaic cell, comprising:
 a base electrode;   a top electrode; and   an active layer disposed between the base electrode and top electrode, the active layer containing a IB-IIIA-VIA alloy, wherein the active layer is formed from a molten mixture containing one or more metals of group IIIA and metallic nanoparticles containing elements of group IB.   
     
     
         3 . The cell of  claim 2  wherein at least one of the base electrode and top electrode is transparent. 
     
     
         4 . The cell of  claim 2  further comprising a layer of cadmium sulfide (CdS), zinc sulfide (ZnS), or zinc selenide (ZnS) or some combination of two or more of these disposed between the active layer and the top electrode.