US2011284165A1PendingUtilityA1

Plasma processing apparatus

Assignee: IIZUKA HACHISHIROPriority: May 17, 2010Filed: May 17, 2011Published: Nov 24, 2011
Est. expiryMay 17, 2030(~3.8 yrs left)· nominal 20-yr term from priority
H10P 72/0421H01J 37/32449H01J 37/32431H01J 37/3211H01J 37/321H01J 37/3244H10P 50/242H10P 50/267H05H 1/46H01J 37/32568
38
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

Provided is a plasma processing apparatus that is capable of promoting improvement of in-plane uniformity of a process compared to a conventional technology, promoting miniaturization of the apparatus and improvement of processing efficiency, and easily changing an interval between an upper electrode and a lower electrode. The plasma processing apparatus includes a lower electrode provided in a processing chamber; an upper electrode having a function of a shower head and capable of moving up and down; a lid provided at an upper side of the upper electrode and airtightly blocking an upper opening of the processing chamber; a plurality of exhaust holes formed on a facing surface of the upper electrode; an annular member capable of moving up and down with the upper electrode by being formed to protrude downward along a circumferential portion of the upper electrode, and forming a processing space surrounded by the lower electrode, the upper electrode, and the annular member at a descending location; and a coil disposed on an inner wall portion of the annular member and accommodated in a container formed of a dielectric material.

Claims

exact text as granted — not AI-modified
1 . A plasma processing apparatus comprising:
 a lower electrode, which is provided in a processing chamber and also serves as a holding stage for holding a substrate thereon;   an upper electrode, which is provided in the processing chamber to face the lower electrode, has a function of a shower head for supplying a gas from a plurality of gas ejection holes formed on a facing surface facing the lower electrode toward the substrate in a shower shape, and is capable of moving up and down so that an interval between the upper electrode and the lower electrode is changeable;   a lid, which is provided at an upper side of the upper electrode and airtightly blocks an upper opening of the processing chamber;   a plurality of exhaust holes formed on the facing surface;   an annular member, which is provided to protrude downward along a circumferential portion of the upper electrode to be capable of moving up and down with the upper electrode, and forms a processing space surrounded by the lower electrode, the upper electrode, and the annular member at a descending location; and   a coil, which is provided on an inner wall part of the annular member and accommodated in a container formed of a dielectric material so as to be airtightly isolated from the processing space, and generates induced plasma by applying high-frequency power.   
     
     
         2 . The plasma processing apparatus of  claim 1 , wherein an opening, which is freely opened and shut so as to transfer into and out the substrate, is formed at a side wall of the processing chamber between the lower electrode and the upper electrode, and the substrate is transferred into and out while the annular member is ascended. 
     
     
         3 . The plasma processing apparatus of  claim 1 , wherein the annular member is formed of aluminum covered by an insulating film. 
     
     
         4 . The plasma processing apparatus of  claim 1 , wherein the container formed of the dielectric material has an air or inert gas atmosphere under a pressure higher than or equal to 1330 Pa and lower than or equal to an atmospheric pressure. 
     
     
         5 . The plasma processing apparatus of  claim 1 , wherein the coil is formed of a hollow conductor having a pipe shape, and a temperature adjusting medium is introduced into the coil. 
     
     
         6 . The plasma processing apparatus of  claim 1 , wherein a frequency of the high-frequency power applied to the coil is in the range from 450 KHz to 2 MHz. 
     
     
         7 . The plasma processing apparatus of  claim 1 , wherein the annular member and the upper electrode are maintained electrically conducted to each other, and the annular member is connected to ground potential via a flexible sheet cable formed of a metal sheet having a surface covered with an insulating layer. 
     
     
         8 . The plasma processing apparatus of  claim 1 , wherein driving means, which moves the annular member and the upper electrode up and down is multi-axially driven using an electric cylinder.

Join the waitlist — get patent alerts

Track US2011284165A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.