Plasma processing equipment and plasma generation equipment

Abstract

Disclosed is ICP plasma processing equipment wherein uniformity of plasma and plasma ignition are improved. Plasma processing equipment comprises a vacuum processing chamber ( 1 ), an insulating material ( 12 ), a gas inlet ( 3 ), a high frequency induction antenna (antenna) ( 7 ) provided upper outside of the vacuum processing chamber ( 1 ), magnetic field coils ( 81, 82 ) for forming a magnetic field in the vacuum processing chamber ( 1 ), a yoke ( 83 ) for controlling distribution of a magnetic field in the vacuum processing chamber ( 1 ), a high frequency power supply ( 51 ) for generating plasma and supplying a high frequency current to the antenna ( 7 ), and a power supply for supplying power to the magnetic field coils ( 81, 82 ), wherein the antenna ( 7 ) is divided into n high frequency induction antenna elements ( 7 - 1 ) (not shown), ( 7 - 2 ), ( 7 - 3 ) (not shown), and ( 7 - 4 ), the divided antenna elements are arranged in tandem on one circle so that a high frequency current delayed sequentially by λ (wavelength of high frequency power supply)/n flows clockwise through the antenna elements ( 7 - 2 through 7 - 4 ) arranged in tandem via delay means, and a magnetic field is applied from the magnetic field coils ( 81, 82 ) to generate electron cyclotron resonance (ECR) phenomenon.

1 . A plasma processing apparatus comprising:
 a vacuum reactor composing a vacuum processing chamber for storing a sample;   a gas inlet for introducing a processing gas into the vacuum processing chamber;   a high frequency induction antenna disposed outside the vacuum processing chamber;   a magnetic field coil for forming a magnetic field in the vacuum processing chamber;   a high frequency power supply for generating plasma supplying a high frequency current to the high frequency induction antenna; and   a power supply for supplying power to the magnetic field coil, the high frequency power supply supplying high frequency current to the high frequency induction antenna for generating plasma from the gas supplied to the vacuum processing chamber to subject the sample to plasma processing;   wherein the high frequency induction antenna is divided into n (an integer of n≧2) high frequency induction antenna elements, the divided respective high frequency induction antenna elements are arranged in tandem on a circle, high frequency current delayed sequentially by λ (wavelength of high frequency power supply)/n flows to the tandomly arranged high frequency induction antenna elements the current sequentially delayed in a clockwise direction with respect to a line of magnetic force of the magnetic field formed by supplying power to the magnetic field coil respectively, and an electric field rotating in a constant direction is formed to generate plasma for subjecting the sample to plasma processing.   
     
     
         2 . The plasma processing apparatus according to  claim 1 , wherein
 the high frequency induction antenna is divided into n (an integer of n≧2) high frequency induction antenna elements, the divided respective high frequency induction antenna elements are arranged in tandem on a circle, delay means are disposed between the tandomly arranged high frequency induction antenna elements and the high frequency power supply, high frequency current delayed sequentially by λ (wavelength of high frequency power supply)/n flows to the respective high frequency induction antenna elements, and an electric field rotating in a constant direction is formed for subjecting the sample to plasma processing.   
     
     
         3 . The plasma processing apparatus according to  claim 1 , wherein
 the high frequency induction antenna is divided into n (an integer of n≧2) high frequency induction antenna elements, the divided respective high frequency induction antenna elements are arranged in tandem on a circle, high frequency current delayed sequentially by λ (wavelength of high frequency power supply)/n in advance via n high frequency power supplies flows to the high frequency induction antenna elements arranged in tandem, and an electric field rotating in a constant direction is formed for subjecting the sample to plasma processing.   
     
     
         4 . The plasma processing apparatus according to  claim 1 , wherein
 the high frequency induction antenna is divided into m (m being a positive even number) high frequency induction antenna elements, the divided respective high frequency induction antenna elements are arranged in tandem on a circle, high frequency current delayed sequentially by λ (wavelength of high frequency power supply)/m in advance via m/2 high frequency power supplies flows sequentially to the high frequency induction antenna elements starting from the first high frequency induction antenna element to the m/2 th  high frequency induction antenna element,   high frequency currents having the same phases as those supplied to the first to m/2 th  high frequency induction antenna elements to which the high frequency induction antenna elements are opposed to are flown sequentially to the high frequency induction antenna elements starting from the m/2+1 st  high frequency induction antenna element to the m th  high frequency induction antenna element, the high frequency induction antenna elements being arranged so that the directions of currents flowing through the high frequency induction antenna elements are reversed, and an electric field rotating in a constant direction is formed for subjecting the sample to plasma processing.   
     
     
         5 . The plasma processing apparatus according to  claim 1 , wherein
 the plurality of antennas and the magnetic field are arranged so that the induction electric field E formed by the plurality of antennas and the magnetic field B satisfy a relationship of E×B≠0.   
     
     
         6 . The plasma processing apparatus according to  claim 1 , wherein
 a rotational frequency of the rotating induction electric field E formed via the plurality of antennas is made to correspond to an electron cyclotron frequency via the magnetic field B.   
     
     
         7 . The plasma processing apparatus according to  claim 1 , wherein
 a variation frequency f B  of the magnetic field B and a rotational frequency of Larmor motion (electron cyclotron frequency ω c ) satisfy a relationship of 2πf B <<ω c .   
     
     
         8 . A plasma generation apparatus comprising a vacuum processing chamber and a plurality of high frequency induction antennas through which high frequency flows disposed outside the vacuum processing chamber, wherein an induction electric field distribution formed in the vacuum processing chamber via the plurality of antennas is formed to rotate in a constant direction in a magnetic field having a finite value. 
     
     
         9 . A plasma generation apparatus comprising a vacuum processing chamber and a plurality of high frequency induction antennas through which high frequency flows disposed outside the vacuum processing chamber, wherein the plurality of antennas are arranged axisymmetrically, a magnetic field is distributed axisymmetrically, the axis of the plurality of antennas and the axis of the magnetic field distribution correspond, and the induction electric field distribution formed in the vacuum processing chamber rotates in a constant direction. 
     
     
         10 . The plasma generation apparatus according to  claim 8  or  claim 9 , wherein
 a direction of rotation of the induction electric field distribution rotating in the constant direction is clockwise with respect to a direction of a line of magnetic force of the magnetic field. 
 
     
     
         11 . The plasma generation apparatus according to  claim 8  or  claim 9 , wherein
 the plurality of antennas and the magnetic field are arranged so that the induction electric field E formed via plurality of antennas and the magnetic field B satisfy a relationship of E×B≠0. 
 
     
     
         12 . The plasma generation apparatus according to  claim 8  or  claim 9 , wherein
 a rotational frequency of the rotating induction electric field E formed via the plurality of antennas is made to correspond to an electron cyclotron frequency via the magnetic field B. 
 
     
     
         13 . The plasma generation apparatus according to  claim 8  or  claim 9 , wherein
 a variation frequency f 3  of the magnetic field B and a rotational frequency of Larmor motion (electron cyclotron frequency ω c ) satisfy a relationship of 2πf B <<ω c .