Printed circuit board and method of manufacturing the same

Abstract

Disclosed herein is a printed circuit board, including: a metal substrate; an anodic oxide layer formed by anodizing the metal substrate; circuit layers formed on the anodic oxide layer; and a first sol-gel layer formed by applying a photocatalytic material between circuit wirings of the circuit layers and then curing the applied photocatalytic material. The printed circuit board is advantageous in that it can be realized into a high-voltage package printed circuit board because a sol-gel layer is formed between circuit wirings of circuit layers.

1 . A printed circuit board, comprising:
 a metal substrate;   an anodic oxide layer formed by anodizing the metal substrate;   circuit layers formed on the anodic oxide layer; and   a first sol-gel layer formed by applying a photocatalytic material between circuit wirings of the circuit layers and then curing the applied photocatalytic material.   
     
     
         2 . The printed circuit board according to  claim 1 , wherein the photocatalytic material is alumina or titanium dioxide. 
     
     
         3 . The printed circuit board according to  claim 1 , wherein the anodic oxide layer is formed only on one side and both lateral sides of the metal substrate. 
     
     
         4 . A method of manufacturing a printed circuit board, comprising:
 providing a metal substrate;   anodizing the metal substrate to form an anodic oxide layer;   forming circuit layers on one side of the anodic oxide layer; and   applying a photocatalytic material between circuit wirings of the circuit layers and then curing the applied photocatalytic material to form a first sol-gel layer.   
     
     
         5 . The method according to  claim 4 , wherein, in the forming of the anodic oxide layer, the anodic oxide layer is formed by anodizing only one side and both lateral sides of the metal substrate. 
     
     
         6 . The method according to  claim 4 , wherein the forming of the circuit layers comprises:
 forming a seed layer on the anodic oxide layer;   forming a circuit plating layer on the seed layer by electrolytic plating;   applying an etching resist for forming circuit patterns onto the circuit plating layer and then etching the seed layer and the circuit plating layer; and   removing the etching resist.   
     
     
         7 . The method according to  claim 4 , wherein the forming of the circuit layers comprises:
 forming a seed layer on the anodic oxide layer;   applying a plating resist for forming circuit patterns onto the seed layer;   forming a circuit plating layer on the seed layer; and   removing the plating resist to expose the seed layer, and then etching the exposed seed layer.   
     
     
         8 . The method according to  claim 4 , wherein the forming of the first sol-gel layer comprises:
 applying a photocatalytic material onto the anodic oxide layer formed on the other side of the metal substrate and then curing the applied photocatalytic material to form a second sol-gel layer;   removing the second sol-gel layer; and   removing the anodic oxide layer formed on the other side of the metal substrate.   
     
     
         9 . The method according to  claim 4 , wherein the photocatalytic material is alumina or titanium dioxide. 
     
     
         10 . The method according to  claim 4 , wherein the photocatalytic material is applied by spraying, dipping or aerosol deposition. 
     
     
         11 . The method according to  claim 4 , wherein the applied photocatalytic material is cured at a temperature of 100˜200° C. .