Semiconductor device

Abstract

An object of the present invention is providing a semiconductor device that is capable of improving the reliability of a semiconductor element and enhancing the mechanical strength without suppressing the scale of a circuit. The semiconductor device includes an integrated circuit sandwiched between first and second sealing films, an antenna electrically connected to the integrated circuit, the first sealing film sandwiched between a substrate and the integrated circuit, which includes a plurality of first insulating films and at least one second insulating film sandwiched therebetween, the second sealing film including a plurality of third insulating films and at least one fourth insulating film sandwiched therebetween. The second insulating film has lower stress than the first insulting film and the fourth insulating film has lower stress than the third insulating film. The first and third insulating films are inorganic insulating films.

1 . A semiconductor device comprising:
 a first flexible substrate;   a first sealing film over the first flexible substrate;   an integrated circuit comprising a transistor over the first sealing film;   an antenna over the first sealing film, the antenna being configured to receive a signal from a reader/writer wirelessly and being electrically connected to the integrated circuit;   a second sealing film over the integrated circuit and the antenna wherein the integrated circuit and the antenna are interposed between the first sealing film and the second sealing film; and   a second flexible substrate over the second sealing film;   wherein each of the first sealing film includes at least two inorganic insulating films and an organic insulating film interposed between the two inorganic insulating films.   
     
     
         2 . The semiconductor device according to  claim 1  wherein the transistor is a thin film transistor. 
     
     
         3 . The semiconductor device according to  claim 1  wherein each of the two inorganic insulating films comprises a material selected from the group consisting of silicon nitride, silicon nitride oxide, aluminum oxide, aluminum nitride, aluminum nitride oxide or aluminum silicon nitride oxide. 
     
     
         4 . The semiconductor device according to  claim 1  wherein the organic insulating film comprises a material selected from the group consisting of polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene or epoxy resin.