Semiconductor device and semiconductor device manufacturing method

Abstract

A chip size package includes: a radio frequency substrate having a radio frequency semiconductor circuit formed on a principal surface; a semiconductor cover substrate arranged at a position facing the principal surface of the radio frequency substrate; and a joining frame arranged in a manner such as to surround the radio frequency semiconductor circuit between the radio frequency substrate and the semiconductor cover substrate, the joining frame joining the radio frequency substrate and the semiconductor cover substrate, wherein: the radio frequency substrate further has a wire formed on a surface opposite to the principal surface; and the radio frequency semiconductor circuit and the wire are electrically connected to each other through a via hole penetrating through the radio frequency substrate in a thickness direction thereof.

1 . A semiconductor device comprising:
 a radio frequency substrate having a principal surface on which a radio frequency semiconductor circuit is formed;   a semiconductor substrate arranged at a position facing the principal surface of said radio frequency substrate; and   a joining frame arranged between said radio frequency substrate and said semiconductor substrate in a manner such as to surround said radio frequency semiconductor circuit, said joining frame joining said radio frequency substrate to said semiconductor substrate,   wherein said radio frequency substrate further includes a wire formed on a surface opposite to the principal surface, and   said radio frequency semiconductor circuit and said wire are electrically connected to each other through a via hole penetrating through said radio frequency substrate in a thickness direction.   
     
     
         2 . The semiconductor device according to  claim 1 ,
 wherein said semiconductor substrate is a silicon semiconductor substrate.   
     
     
         3 . The semiconductor device according to  claim 2 ,
 wherein a gap between said radio frequency semiconductor circuit and said semiconductor substrate is 10 μm or above.   
     
     
         4 . The semiconductor device according to  claim 2 ,
 wherein said semiconductor substrate has specific resistance larger than 10 Ωcm.   
     
     
         5 . The semiconductor device according to  claim 3 ,
 wherein a bumpy part is formed on a surface of said semiconductor substrate facing said radio frequency semiconductor circuit.   
     
     
         6 . The semiconductor device according to  claim 5 ,
 wherein the bumpy part is formed with a plurality of conical projections arranged at a predetermined interval.   
     
     
         7 . The semiconductor device according to  claim 5 ,
 wherein the bumpy part is a rough surface with a surface roughness of 0.1 μm to 10 μm.   
     
     
         8 . The semiconductor device according to  claim 3 ,
 wherein an antireflection film preventing reflection of an electric wave discharged from said radio frequency semiconductor circuit is formed on a surface of said semiconductor substrate facing said radio frequency semiconductor circuit.   
     
     
         9 . The semiconductor device according to  claim 3 ,
 wherein a second semiconductor circuit electrically connected to said radio frequency semiconductor circuit is formed on a surface of said semiconductor substrate facing said radio frequency semiconductor circuit.   
     
     
         10 . The semiconductor device according to  claim 1 ,
 wherein said radio frequency substrate is any of a sapphire substrate, a nitride semiconductor substrate, a GaAs substrate, an SiC substrate, and a silicon semiconductor substrate.   
     
     
         11 . A semiconductor device comprising:
 a radio frequency substrate including a radio frequency semiconductor circuit and an antenna electrically connected to said radio frequency semiconductor circuit;   a silicon semiconductor substrate including a second semiconductor circuit electrically connected to said radio frequency semiconductor circuit, said silicon semiconductor substrate having a second surface facing a first surface of said radio frequency substrate; and   a joining frame arranged between the first and second surfaces, said joining frame joining said radio frequency substrate to said silicon semiconductor substrate.   
     
     
         12 . The semiconductor device according to  claim 11 ,
 wherein said radio frequency semiconductor circuit is formed on the first surface of said radio frequency substrate,   said second semiconductor circuit is formed on the second surface of said silicon semiconductor substrate, and   said radio semiconductor circuit and said second semiconductor circuit are electrically connected to each other through a connecting post.   
     
     
         13 . The semiconductor device according to  claim 12 ,
 wherein said radio frequency semiconductor circuit and said second semiconductor circuit are arranged inside an airtight region surrounded by said radio frequency substrate, said silicon semiconductor substrate, and said joining frame.   
     
     
         14 . The semiconductor device according to  claim 13 ,
 wherein said radio frequency substrate further includes a wire formed on a surface opposite to the first surface, and   said radio frequency semiconductor circuit and said wire are electrically connected to each other through the via hole penetrating through said radio frequency substrate.   
     
     
         15 . The semiconductor device according to  claim 12 ,
 wherein said antenna is formed on a surface opposite to the first surface of said radio frequency substrate, and   said radio frequency semiconductor circuit and said antenna are electrically connected to each other through the via hole penetrating through said radio frequency substrate.   
     
     
         16 . The semiconductor device according to  claim 15 ,
 wherein said radio frequency semiconductor circuit and said antenna are arranged not to overlap each other.   
     
     
         17 . The semiconductor device according to  claim 15 , further comprising
 a mounting substrate joined to the surface opposite to the first surface of said radio frequency substrate,   wherein said mounting substrate includes a through hole formed at a position facing said antenna.   
     
     
         18 . The semiconductor device according to  claim 13 ,
 wherein said antenna is formed on the first surface and outside of said airtight region.   
     
     
         19 . The semiconductor device according to  claim 12 ,
 wherein said antenna is formed on the first surface of said radio frequency substrate,   a ground is formed on a surface opposite to the first surface of said radio frequency substrate, and   a slot is formed at a position of said ground overlapping said antenna.   
     
     
         20 . The semiconductor device according to  claim 11 ,
 wherein said radio frequency semiconductor circuit is formed on a surface opposite to the first surface of said radio frequency substrate, and molded by a resin member.   
     
     
         21 . The semiconductor device according to  claim 20 ,
 wherein said second semiconductor circuit is formed on the second surface of said silicon semiconductor substrate, and   said radio frequency semiconductor circuit and said second semiconductor circuit are electrically connected to each other through the via hole penetrating through said radio frequency substrate.   
     
     
         22 . The semiconductor device according to  claim 20 ,
 wherein said second semiconductor circuit is formed on a surface opposite to the second surface of said silicon semiconductor substrate, and   said radio frequency semiconductor circuit and said second semiconductor circuit are electrically connected to each other through a first via hole penetrating through said radio frequency substrate and a second via hole penetrating through said silicon semiconductor substrate.   
     
     
         23 . The semiconductor device according to  claim 11 ,
 wherein said joining frame is formed by bonding with a bonding member a first joining frame projecting from the first surface of said radio frequency substrate and a second joining frame projecting from the second surface of said silicon semiconductor substrate.   
     
     
         24 . The semiconductor device according to  claim 10 ,
 wherein said radio frequency substrate is any of a sapphire substrate, a nitride semiconductor substrate, a GaAs sunbstrate, an SiC substrate, and a silicon semiconductor substrate.   
     
     
         25 . A semiconductor device manufacturing method of manufacturing the semiconductor device according to  claim 1 , said semiconductor device manufacturing method comprising:
 forming the radio frequency semiconductor circuit in each of a plurality of regions previously laid out on a principal surface of a first wafer serving as a starting material of the radio frequency substrate;   forming, on at least either of the principal surface of the first wafer and a principal surface of a second wafer serving as a starting material of the semiconductor substrate, a joining frame in a manner such as to lay out the plurality of regions;   superposing the first wafer and the second wafer on each other in a manner such as to sandwich the joining frame;   joining the first and second wafers by partially heating the first and second wafers along the joining frame; and   cutting the joined first and second wafers along the joining frame.   
     
     
         26 . The semiconductor device manufacturing method according to  claim 25 ,
 wherein the joining frame is formed into a grid-like shape in a manner such as to lay out the plurality of regions.   
     
     
         27 . The semiconductor device manufacturing method according to  claim 25 ,
 wherein the first wafer is formed of a light-transmissive material; and   the first and second wafers are joined to each other by irradiating laser light along the joining frame from a side of the first wafer.   
     
     
         28 . The semiconductor device manufacturing method according to  claim 27 ,
 wherein the first wafer is a sapphire substrate.   
     
     
         29 . A semiconductor device manufacturing method of manufacturing the semiconductor device according to  claim 11 , said semiconductor device manufacturing method comprising:
 forming the radio frequency semiconductor circuit and the antenna in each of a previously laid-out plurality of regions of a first wafer serving as a starting material of the radio frequency substrate;   forming the second semiconductor circuit in each of a previously laid out plurality of regions of a second wafer serving as a starting material of the silicon semiconductor substrate;   forming, ate at least either of the first wafer and the second wafer, a joining frame in a manner such as to lay out the plurality of regions;   superposing the first wafer and the second wafer on each other in a manner such as to sandwich the joining frame;   joining the first and second wafers by partially heating the first and second wafers along the joining frame; and   cutting the joined first and second wafers along the joining frame.   
     
     
         30 . The semiconductor device manufacturing method according to  claim 29 ,
 wherein the joining frame is formed into a grid-like shape in a manner such as to lay out the plurality of regions.   
     
     
         31 . The semiconductor device manufacturing method according to  claim 29 ,
 wherein the first wafer is formed of a light transmissive material, and   the first and second wafers are joined to each other by irradiating laser light along the joining frame from a side of the first wafer.   
     
     
         32 . The semiconductor device manufacturing method according to  claim 31 ,
 wherein the first wafer is a sapphire substrate.