Method of manufacturing semiconductor device

Abstract

A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, forming the second insulating film comprises forming a lower insulating film containing oxygen and a metal element, thermally treating the lower insulating film in an atmosphere containing oxidizing gas, and forming an upper insulating film on the thermally treated lower insulating film using film forming gas containing at least one of hydrogen and chlorine.

1 . A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film,
 forming the second insulating film comprising:
 forming a lower insulating film containing oxygen and a metal element; 
 thermally treating the lower insulating film in an atmosphere containing oxidizing gas; and 
 forming an upper insulating film on the thermally treated lower insulating film using film forming gas containing at least one of hydrogen and chlorine. 
   
     
     
         2 . The method according to  claim 1 , wherein forming the second insulating film further comprises forming an insulating film containing oxygen, and
 the lower insulating film is formed on the insulating film containing oxygen.   
     
     
         3 . The method according to  claim 1 , wherein forming the second insulating film further comprises forming an insulating film containing nitrogen, and
 the lower insulating film is formed on the insulating film containing nitrogen.   
     
     
         4 . The method according to  claim 1 , wherein the oxidizing gas contains at least one of oxygen gas, ozone gas, steam, and an oxygen radical. 
     
     
         5 . The method according to  claim 1 , wherein the lower insulating film has a higher dielectric constant than the upper insulating film. 
     
     
         6 . The method according to  claim 1 , wherein the film forming gas further contains oxygen. 
     
     
         7 . The method according to  claim 1 , wherein the upper insulating film is formed of a silicon oxide film. 
     
     
         8 . The method according to  claim 1 , wherein the lower insulating film is formed of an aluminum oxide film. 
     
     
         9 .- 16 . (canceled)