Controlled process and resulting device

Abstract

A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN or SiC. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.

1 - 51 . (canceled) 
     
     
         52 . A method comprising:
 providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN or SiC;   introducing energetic particles through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon;   providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate; and   making a cleaving action using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.   
     
     
         53 . A method as in  claim 52  wherein introducing the energetic particles comprises introducing hydrogen. 
     
     
         54 . A method as in  claim 53  wherein introducing hydrogen comprises introducing hydrogen at an energy of about 1 MeV. 
     
     
         55 . A method as in  claim 53  wherein introducing hydrogen comprises introducing hydrogen at a dose of about 10 16  atoms/cm 2 . 
     
     
         56 . A method as in  claim 52  wherein a temperature of the multi-material substrate does not exceed 400° C. during the introducing. 
     
     
         57 . A method as in  claim 52  wherein the providing energy comprises applying energy from a thermal source. 
     
     
         58 . A method as in  claim 57  wherein the thermal source comprises a photon beam. 
     
     
         59 . A method as in  claim 52  wherein the making the cleaving action comprises applying energy from a compressional source. 
     
     
         60 . A method as in  claim 59  wherein the compressional source comprises compressed fluid that is static. 
     
     
         61 . A method as in  claim 59  wherein the compressional source comprises pressurized gas. 
     
     
         62 . A method as in  claim 61  wherein the making the cleaving comprises applying the pressurized gas to a sealed chamber. 
     
     
         63 . A method as in  claim 62  wherein a pressure differential exists between a pressure within the sealed chamber and ambient pressure. 
     
     
         64 . A method as in  claim 62  wherein the pressure within the sealed chamber forces the multi-material film to separate from the remaining portion by a prying action. 
     
     
         65 . A method as in  claim 62  further comprising adjusting the pressure within the sealed chamber during the cleaving action. 
     
     
         66 . A method as in  claim 65  wherein a temperature of the multi-material substrate does not exceed 400° C. during the cleaving action. 
     
     
         67 . A method as in  claim 65  wherein the temperature of the multi-material substrate does not exceed 350° C. during the cleaving action. 
     
     
         68 . A method as in  claim 59  wherein the making the cleaving action comprises applying additional energy from a mechanical source. 
     
     
         69 . A method as in  claim 68  wherein the mechanical source comprises a compressional mechanical energy source. 
     
     
         70 . A method as in  claim 52  wherein the making the cleaving action comprises applying energy from a mechanical source. 
     
     
         71 . A method as in  claim 70  wherein the mechanical source is derived from compressional energy.