Method for fabricating electronic component and electro-plating apparatus

Abstract

A method for fabricating an electronic component according to an Embodiment, includes a seed film forming process and an electro-plating process. In the seed film forming process, a seed film is formed above a substrate. In the electro-plating process, electro-plating is performed by soaking the seed film in a plating solution in a plating bath to which the plating solution being bubbled by a nitrogen gas is supplied, using the seed film as a cathode.

1 . A method for fabricating an electronic component, comprising:
 forming a seed film above a substrate; and   performing electro-plating by soaking the seed film in a plating solution in a plating bath to which the plating solution being bubbled by a nitrogen gas is supplied, using the seed film as a cathode.   
     
     
         2 . The method according to  claim 1 , further comprising:
 cooling the seed film by supplying a nitrogen gas to a rear surface of the substrate from a same supply source as the nitrogen gas used for a bubbling.   
     
     
         3 . The method according to  claim 2 , wherein the nitrogen gas after being supplied to the rear surface of the substrate is used for the bubbling of the plating solution. 
     
     
         4 . The method according to  claim 1 , wherein when the electro-plating is performed, the seed film is soaked in the plating solution from outside the plating solution in a state in which a voltage is applied to the seed film. 
     
     
         5 . The method according to  claim 1 , wherein a voltage lower than a voltage when the electro-plating is started after the seed film is soaked in the plating solution is applied to the seed film when the seed film is soaked in the plating solution from outside the plating solution. 
     
     
         6 . The method according to  claim 1 , wherein the seed film is formed by using copper (Cu). 
     
     
         7 . The method according to  claim 1 , wherein the plating solution supplied to the plating bath continues to be bubbled by the nitrogen gas since before the electro-plating is started at least until when the electro-plating is started. 
     
     
         8 . The method according to  claim 1 , wherein the plating solution supplied to the plating bath continues to be bubbled by the nitrogen gas since before the electro-plating is started until the electro-plating is completed. 
     
     
         9 . The method according to  claim 1 , further comprising:
 bubbling the plating solution inside a supply tank by the nitrogen gas; and   supplying the plating solution that continues to be bubbled inside the supply tank to the plating bath.   
     
     
         10 . The method according to  claim 9 , wherein the plating solution that continues to be bubbled inside the supply tank circulates through the supply tank and the plating bath since before the electro-plating is started until the electro-plating is completed. 
     
     
         11 . The method according to  claim 9 , wherein a portion of the plating solution overflowing from the plating bath is bubbled inside the supply tank by the nitrogen gas and then supplied to the plating bath again. 
     
     
         12 . An electro-plating apparatus, comprising:
 a holder configured to hold a substrate to be plated;   a plating bath in which an anode member is arranged;   a supply tank configured to supply a plating solution being bubbled by a nitrogen gas to the plating bath;   a nitrogen gas supply unit configured to supply the nitrogen gas into the supply tank; and   a current supply device configured to pass a current between the substrate to be plated and the anode member.   
     
     
         13 . The apparatus according to  claim 12 , wherein the holder has a channel, through which a nitrogen gas supplied from the nitrogen gas supply unit passes while the substrate to be plated is held, formed in a rear surface side of the substrate held. 
     
     
         14 . The apparatus according to  claim 13 , wherein the rear surface of the substrate to be plated is cooled by the nitrogen gas being passed through the channel. 
     
     
         15 . The apparatus according to  claim 12 , wherein a seed film is formed on the substrate to be plated, and the seed film is soaked into the plating solution from outside the plating solution by the holder in a state in which a voltage is applied to the seed film by the current supply device. 
     
     
         16 . The apparatus according to  claim 15 , wherein the current supply device applies a voltage, lower than the voltage when electro-plating is started after the seed film is soaked in the plating solution, to the seed film when the seed film is soaked into the plating solution from outside the plating solution. 
     
     
         17 . The apparatus according to  claim 15 , wherein the nitrogen gas supply unit is controlled to continue to supply the nitrogen gas into the supply tank since before the seed film is soaked in the plating solution at least until when electro-plating is started. 
     
     
         18 . The apparatus according to  claim 15 , wherein the nitrogen gas supply unit is controlled to continue to supply the nitrogen gas into the supply tank since before the seed film is soaked in the plating solution until the electro-plating is completed. 
     
     
         19 . The apparatus according to  claim 12 , further comprising:
 a mechanism configured to cause the plating solution continuing to be bubbled by the nitrogen gas inside the supply tank to circulate between the supply tank and the plating bath since before electro-plating is started until the electro-plating is completed.   
     
     
         20 . The apparatus according to  claim 19 , wherein a portion of the plating solution overflowing from the plating bath is bubbled inside the supply tank by the nitrogen gas and then supplied to the plating bath again.