US2011303248A1PendingUtilityA1

Cleaning apparatus of semiconductor substrate and method of manufacturing semiconductor device

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Assignee: OSHIMA TADASHIPriority: Mar 29, 2006Filed: Aug 25, 2011Published: Dec 15, 2011
Est. expiryMar 29, 2026(expired)· nominal 20-yr term from priority
Inventors:Tadashi Oshima
H10P 72/0424H10P 72/0414H10P 70/234H10P 70/27H10W 20/087H10W 20/081H10W 20/085
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Claims

Abstract

After a liquid chemical treatment is finished, in parallel with a washing away treatment and/or a drying treatment, by spraying from a nozzle for a cleaning liquid supplied by a cleaning line to an outer surface of a nozzle for a liquid chemical, crystals and the like of components of the liquid chemical adhered on the outer surface of the nozzle are removed. In the cleaning treatment, a spraying time of the cleaning liquid is five seconds to ten seconds. In addition, the components of the cleaning liquid is not specifically limited, however, since ammonium phosphate tends to be solved in purified water, if a liquid chemical containing ammonium phosphate is used, it is preferable to use purified water as the cleaning liquid. Depending on the components and the like of the liquid chemical, a solution that can solve the crystals and the like may be used in stead.

Claims

exact text as granted — not AI-modified
1 . A cleaning apparatus of a semiconductor substrate comprising:
 a nozzle for a liquid chemical spraying a liquid chemical to a semiconductor substrate; and   a removing unit removing materials adhered to a outer surface of said nozzle for a liquid chemical by spraying a cleaning liquid to said materials at a position apart from said semiconductor substrate.   
     
     
         2 . The cleaning apparatus of a semiconductor substrate according to  claim 1 , wherein said cleaning liquid is purified water. 
     
     
         3 . The cleaning apparatus of a semiconductor substrate according to  claim 1 , further comprising a treating bath storing said liquid chemical after being sprayed to said semiconductor substrate, said removing unit having a nozzle cleaning bath arranged at a position apart from said treating bath. 
     
     
         4 . The cleaning apparatus of a semiconductor substrate according to  claim 1 , further comprising a speed limiting unit limiting a moving speed of said nozzle for a liquid chemical to 2 cm/second or less. 
     
     
         5 . A cleaning apparatus of a semiconductor substrate comprising:
 a nozzle for a liquid chemical spraying a liquid chemical to a semiconductor substrate; and   a speed limiting unit limiting a moving speed of said nozzle for a liquid chemical.   
     
     
         6 . The cleaning apparatus of a semiconductor substrate according to  claim 5 , further comprising a nozzle for purified water spraying purified water to said semiconductor substrate. 
     
     
         7 . The cleaning apparatus of a semiconductor substrate according to  claim 1 , wherein said liquid chemical contains ammonium fluoride or ammonium phosphate.

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