US2011303642A1PendingUtilityA1
Substrate processing system, substrate processing method, and storage medium
Est. expiryDec 19, 2026(~0.4 yrs left)· nominal 20-yr term from priority
Inventors:Eiichi Nishimura
H10P 72/0421H10P 72/72H10P 70/56H10P 72/0414
48
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Claims
Abstract
A substrate processing system that can reliably prevent a rear surface of a substrate from getting scratched without bringing about a decrease in the throughput. A printing module connected to a loader module prints a protective film on the rear surface of the substrate before the substrate is subjected to plasma etching processing. A cleaning module connected to the loader module removes the protective film from the rear surface of the substrate after the substrate has been subjected to the plasma etching processing.
Claims
exact text as granted — not AI-modified1 . A substrate processing method in a substrate processing system having at least an etching apparatus that subjects a substrate to plasma etching processing, wherein the etching apparatus has a mounting stage that electrostatically attracts and holds the substrate, and the mounting stage contacts a rear surface of the substrate, the substrate processing method comprising:
a printing step of printing a protective film on the rear surface of the substrate; an etching step of subjecting a front surface of the substrate to the plasma etching processing; and a removing step of removing the protective film.
2 . A substrate processing method as claimed in claim 1 , wherein in said printing step, the protective film is printed by carrying out a screen printing process.
3 . A substrate processing method as claimed in claim 1 , wherein in said printing step, the protective film is printed by attaching a predetermined film.
4 . A substrate processing method as claimed in claim 1 , wherein in said removing step, the protective film is removed by carrying out a normal pressure plasma ashing process.
5 . A substrate processing method as claimed in claim 1 , wherein in said removing step, the protective film is removed by carrying out a superheated steam jetting process.
6 . A substrate processing method as claimed in claim 1 , wherein the protective film is made of resin.
7 . A substrate processing method as claimed in claim 1 , wherein the protective film is made of one selected from the following: silica, organic polymer of fluorine-free aromatic hydrocarbon, polyimide, and resist.
8 . A substrate processing method as claimed in claim 1 , wherein the substrate processing system further comprises a protective film removing apparatus that removes the protective film from the rear surface of the substrate after the substrate has been subjected to the plasma etching processing,
wherein the protective film removing apparatus includes a second mounting stage having a cylindrical shape on which the substrate is mounted, and the second mounting stage has on a top surface thereof jet holes, which jet protective film removing agent, and lift pins projecting from the top surface, and wherein in said removing step, the lift pins move the substrate so that a gap between the protective film printed on the rear surface of the substrate and each jet hole becomes 1 to 3 mm.
9 . A substrate processing method as claimed in claim 1 , wherein in said removing step, if a portion of the protective film on a contact area, where the substrate is in contact with the lift pin, cannot be removed, a transfer arm mechanism which transfers the substrate shifts the position of the substrate.Cited by (0)
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