Method for manufacturing transparent electrode pattern and method for manufacturing electro-optic device having the transparent electrode pattern
Abstract
Provided are a method for manufacturing a transparent electrode pattern and a method for manufacturing an electro-optic device having the transparent electrode pattern. The method for manufacturing the transparent electrode pattern includes forming a transparent electrode on a light-transmissive substrate, patterning the transparent electrode by removing a portion of the transparent electrode, and forming an insulating protective layer in an edge region of the patterned transparent electrode through a printing process. In accordance with the method, the insulating protective layer is formed in the edge region of the patterned transparent electrode through the printing process so that an apparatus and method for manufacturing the insulating protective layer can be simplified, resulting in a decrease in manufacturing cost.
Claims
exact text as granted — not AI-modified1 . A method for manufacturing a transparent electrode pattern, the method comprising:
forming a transparent electrode on a light-transmissive substrate; patterning the transparent electrode by removing a portion of the transparent electrode; and forming an insulating protective layer in an edge region of the patterned transparent electrode through a printing process.
2 . The method of claim 1 , wherein the transparent electrode comprises a conductive thin film having a light transmittance of 50% or higher.
3 . The method of claim 2 , wherein the transparent electrode comprises an oxide selected from the group consisting of indium tin oxide, indium zinc oxide, zinc oxide, tin oxide, indium oxide, and combinations thereof.
4 . The method of claim 1 , wherein the light-transmissive substrate is divided into an active region and an inactive region, and the transparent electrode on the inactive region of the light-transmissive substrate is removed.
5 . The method of claim 4 , wherein the insulating protective layer is provided in the edge region of the transparent electrode and the inactive region.
6 . The method of claim 5 , wherein the forming of the insulating protective layer comprises:
coating the edge region of the transparent electrode with an insulating coating material; and curing the insulating coating material.
7 . The method of claim 5 , wherein the coating of the edge region of the transparent electrode with the insulating coating material comprises:
bringing a stencil mask into contact with the substrate where the transparent electrode is formed, the stencil mask exposing the inactive region and the edge region of the transparent electrode; coating the insulating coating material on the stencil mask; and coating the insulating coating material on an exposed region of the stencil mask.
8 . The method of claim 7 , wherein coating the insulating coating material comprises using a squeeze.
9 . The method of claim 7 , wherein the insulating coating material comprises an organic material having fluidity or an inorganic material having fluidity.
10 . The method of claim 9 , wherein the insulating coating material is cured by heating or light irradiating.
11 . The method of claim 10 , wherein the organic material comprises photoresist, and wherein the inorganic material comprises a material selected from the group consisting of piezoelectric ceramic, alumina, oxide, nitride, and combinations thereof.
12 . The method of claim 1 , wherein the transparent electrode is patterned using a laser scribing process or patterned using a photolithography process and an etching process.
13 . The method of claim 1 , the method further comprises cleaning the substrate to remove impurities from the substrate after the insulating protective layer is formed.
14 . An electro-optic device, the comprising:
a light-transmissive substrate divided into an active region and an inactive region; a transparent electrode formed on the active region of the light-transmissive substrate; and an insulating protective layer formed on an edge region of the transparent electrode.
15 . The device of claim 14 , wherein the transparent electrode comprises a conductive thin film having a light transmittance of 50% or higher.
16 . The device of claim 15 , wherein the transparent electrode comprises an oxide selected from the group consisting of indium tin oxide, indium zinc oxide, zinc oxide, tin oxide, indium oxide, and combinations thereof.
17 . The device of claim 14 , wherein the insulating protective layer is provided in the edge region of the patterned transparent electrode and the inactive region.
18 . The device of claim 14 , wherein the insulating protective layer comprises an organic material having fluidity or an inorganic material having fluidity.
19 . The device of claim 18 , wherein the insulating protective layer is cured by heating or light irradiating.
20 . The device of claim 19 , wherein the organic material comprises photoresist, and the inorganic material comprises a material selected from the group consisting of piezoelectric ceramic, alumina, oxide, nitride, and combinations thereof.Cited by (0)
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