Semiconductor device and method of manufacturing the same

Abstract

The present invention relates to a method of manufacturing a semiconductor device having a shared contact for connection between a source/drain region and a gate electrode. After formation of a gate electrode via a gate insulating film on a semiconductor substrate, a top surface of the substrate is covered with a cover film. After removal of the cover film from at least one of sidewall surface of the gate electrode and a part of the top surface of the substrate adjacent to the sidewall surface, a semiconductor layer is epitaxially grown on a top surface of an exposed substrate to electrically connect the substrate and the at least one sidewall surface of the gate electrode. Then, a source/drain region is formed in a top surface part of the substrate or the semiconductor layer using the gate electrode as a mask.

1 . A semiconductor device comprising:
 a gate electrode which is formed above a semiconductor substrate via a gate insulating film;   a semiconductor layer formed by epitaxial growth to connect at least one of sidewall surfaces of the gate electrode and a top surface of the substrate adjacent to said at least one sidewall surface; and   a source/drain region formed in one of the top surface of the substrate on either side of the gate electrode and the semiconductor layer.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein a groove is formed in a part of the substrate in which the semiconductor layer is epitaxially grown. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the gate electrode is extended to reach an element formation region different from an element formation region in which the source/drain region is formed. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein the gate electrode, the semiconductor layer, and the source/drain region form a part of an SRAM. 
     
     
         5 .- 12 . (canceled)