US2011318690A1PendingUtilityA1
Compound, resin and photoresist composition
Est. expiryJun 29, 2030(~4 yrs left)· nominal 20-yr term from priority
G03F 7/0046G03F 7/0045C07D 311/20C08F 220/301G03F 7/0397C08F 220/303C08F 220/20C07D 327/06C07D 311/06G03F 7/0047C07D 339/08
30
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Claims
Abstract
The present invention provides a compound represented by the formula (I): wherein R 1 represents a hydrogen atom or a methyl group, A 1 represents a single bond or *—(CH 2 ) m —CO—O— in which m represents an integer of 1 to 4 and * represents a binding position to —O—, B 1 represents —O— or —S—, B 2 represents —CH 2 —, —O— or —S— and W 1 represents an optionally substituted aromatic ring, a resin comprising a structural unit derived from the compound and a photoresist composition comprising the resin.
Claims
exact text as granted — not AI-modified1 . A compound represented by the formula (I):
wherein R 1 represents a hydrogen atom or a methyl group, A 1 represents a single bond or *—(CH 2 ) m —CO—O— in which m represents an integer of 1 to 4 and * represents a binding position to —O—, B 1 represents —O— or —S—, B 2 represents —CH 2 —, —O— or —S— and W 1 represents an optionally substituted aromatic ring.
2 . A resin comprising a structural unit derived from the compound according to claim 1 .
3 . A photoresist composition comprising the resin according to claim 2 .
4 . The photoresist composition according to claim 3 , wherein the photoresist composition further contains an acid generator.
5 . The photoresist composition according to claim 3 or 4 , wherein the photoresist composition further contains a basic compound.
6 . A process for producing a photoresist pattern comprising the following steps (1) to (5):
(1) a step of applying the photoresist composition according to any one of claims 3 to 5 on a substrate, (2) a step of forming a photoresist film by conducting drying, (3) a step of exposing the photoresist film to radiation, (4) a step of baking the exposed photoresist film, and (5) a step of developing the baked photoresist film with an alkaline developer, thereby forming a photoresist pattern.Cited by (0)
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