Hdp-cvd system

Abstract

An HDP-CVD system is described, including an HDP-CVD chamber for depositing a material on a wafer, and a pre-heating chamber disposed outside of the HDP-CVD chamber to pre-heat the wafer, before the wafer is loaded in the HDP-CVD chamber, to a temperature higher than room temperature and required in the deposition step to be conducted in the HDP-CVD chamber. The pre-heating chamber is equipped with a heating lamp for the pre-heating. The wafer has been formed with a trench before being pre-heated.

1 . An HDP-CVD system, comprising:
 an HDP-CVD chamber for depositing a material on a wafer; and   a pre-heating chamber disposed outside of the HDP-CVD chamber to pre-heat the wafer, before the wafer is loaded into the HDP-CVD chamber, to a temperature higher than room temperature and required in an deposition step to be conducted in the HDP-CVD chamber,   wherein the pre-heating chamber is equipped with a heating lamp for the pre-heating, and the wafer has been formed with a trench before being pre-heated.   
     
     
         2 . The HDP-CVD system of  claim 1 , wherein the pre-heating chamber and the HDP-CVD chamber are integrated in a cluster tool. 
     
     
         3 . The HDP-CVD system of  claim 1 , wherein the pre-heating chamber is capable of pre-heating only one wafer each time. 
     
     
         4 . The HDP-CVD system of  claim 1 , wherein the pre-heating chamber is capable of pre-heating two or more wafers simultaneously. 
     
     
         5 . The HDP-CVD system of  claim 1 , wherein the material deposited is an insulating material. 
     
     
         6 . The HDP-CVD system of  claim 5 , wherein the insulating material is silicon oxide. 
     
     
         7 . The HDP-CVD system of  claim 6 , wherein the temperature to which the wafer is pre-heated is between 300° C. and 800° C.