Insulating layer, organic thin film transistor using the insulating layer, and method of fabricating the organic thin film transistor

Abstract

Provided is an insulating layer in which an inorganic material is added to an organic polymer to thereby improve the insulating properties, an organic thin film transistor using the insulating layer, and a method of fabricating the organic thin film transistor. An insulating layer for an organic thin film transistor including a vinyl polymer and an inorganic material is provided. Here, a weight ratio of the vinyl polymer to the inorganic material may be in the range of 1:0.0001 to 1:0.5. Accordingly, it is possible to fabricate a thin film at low temperature and, further, to fabricate an insulating layer having a high-dielectric constant, not affecting other layers formed in the previous processes during the formation of the insulating layer.

1 . An insulating layer for an organic thin film transistor comprising a vinyl polymer and an inorganic material. 
     
     
         2 . The insulating layer of  claim 1 , wherein the insulating layer further comprises polymerization products of oligomers. 
     
     
         3 . An organic thin film transistor comprising an insulating layer disposed between first and second layers, wherein the insulating layer comprises a vinyl polymer and an inorganic material. 
     
     
         4 . The organic thin film transistor of  claim 3 , wherein a weight ratio of the vinyl polymer to the inorganic material is 1:0.0001 to 1:0.5. 
     
     
         5 . The organic thin film transistor of  claim 3 , wherein the vinyl polymer is a polymer of a monomer selected from the group consisting of acrylic vinyl monomer, aromatic vinyl monomer, acrylonitrile vinyl monomer, chrolide vinyl monomer, vinyl stearate monomer, and vinyl propionate monomer. 
     
     
         6 . The organic thin film transistor of  claim 5 , wherein the aromatic vinyl monomer comprises one of styrene and divinylbenzene. 
     
     
         7 . The organic thin film transistor of  claim 5 , wherein the chrolide vinyl monomer comprises one of vinylidene chloride and vinyl benzene chloride. 
     
     
         8 . The organic thin film transistor of  claim 3 , wherein the insulating layer further comprises polymerization products of oligomers. 
     
     
         9 . The organic thin film transistor of  claim 8 , wherein the polymerization products of oligomers are 1 to 80 wt % of the total weight of the insulating layer. 
     
     
         10 . The organic thin film transistor of  claim 5 , wherein the inorganic material comprises one selected from the group consisting of BaTiO 3 , SrTiO 3 , TiO 2 , SiO 2 , ITO, Aluminium Tin Oxide, Indium Tin Oxide (ITO), and Ag. 
     
     
         11 . The organic thin film transistor of  claim 5 , wherein the inorganic material comprises a particle having a diameter of 0.01 to 1.0 μm.