Method of producing display device, display device, method of producing thin-film transistor substrate, and thin-film transistor substrate

Abstract

A method of producing a display device includes the steps of forming gate electrodes on a substrate so that an arrangement of a source and a drain, in a pixel row direction, of a thin-film transistor formed in each of pixels on the substrate is reversed every pixel row; forming a gate insulating film and an amorphous semiconductor thin film on the substrate in that order so as to cover the gate electrodes; crystallizing the semiconductor thin film by irradiating the semiconductor thin film with an energy beam so that a scanning direction of the energy beam is the same with respect to the arrangement of the source and the drain in the pixel row direction; and forming a light-emitting element connected to the thin-film transistor.

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         9 . A display device comprising:
 first pixel rows each including thin-film transistors each having a source and a drain arranged in a first direction;   second pixel rows each including thin-film transistors each having a source and a drain arranged in a second direction opposite to the first direction; and   a plurality of light-emitting elements connected to the thin-film transistors.   
     
     
         10 . The display device according to  claim 9 , wherein the first pixel rows and the second pixel rows are alternately arranged. 
     
     
         11 . The display device according to  claim 9 , wherein, among thin-film transistors provided in each of pixels, at least one of a thin-film transistor for switching connected to a scanning line and a signal line provided on a substrate and a thin-film transistor for driving in which a source or a drain is connected to the light-emitting element is disposed so that an arrangement of the source and the drain in a pixel row direction is reversed every pixel row. 
     
     
         12 . A display device comprising:
 sub-pixels each including a light-emitting element connected to a pixel circuit having a thin-film transistor;   pixel rows in which the sub-pixels are arranged along an arrangement direction of a source and a drain of the thin-film transistor; and   display pixels each of which is composed of a set of three or more of the sub-pixels that are adjacently arranged in the arrangement direction and in which the order of arrangement of the source and the drain is reversed only in the thin-film transistor of the pixel circuit connected to the light-emitting element having the lowest luminous efficiency among the light-emitting elements provided in the sub-pixels.   
     
     
         13 . The display device according to  claim 12 ,
 wherein the thin-film transistor has a bottom-gate structure, and   a channel region of the thin-film transistor is composed of a semiconductor thin film crystallized by being irradiated with an energy beam while scanning the energy beam along the arrangement direction.   
     
     
         14 . The display device according to  claim 13 , wherein the channel region of the thin-film transistor of the pixel circuit connected to the light-emitting element having the lowest luminous efficiency is scanned by the energy beam in a direction in which a drain side is upstream. 
     
     
         15 . The display device according to  claim 12 , wherein the thin-film transistor constituting the pixel circuit has a channel width that is different depending on a luminescent color of the light-emitting element connected to the pixel circuit. 
     
     
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         17 . A thin-film transistor substrate comprising:
 first rows each including thin-film transistors each having a source and a drain arranged in a first direction; and   second rows each including thin-film transistors each having a source and a drain arranged in a second direction opposite to the first direction.   
     
     
         18 . The thin-film transistor substrate according to  claim 17 , wherein the first rows and the second rows are alternately arranged.