Method of manufacturing semiconductor device and semiconductor device

Abstract

In a method of manufacturing a semiconductor device, forming a film of amorphous Si on a substrate including an insulating upper surface; injecting a first impurity of a first conductivity in a first region and a second region of the film; crystallizing the film by melting and solidifying the film and activating the first impurity by scanning a first laser light in a first direction and radiating the first laser light over the film; injecting a second impurity of a second conductivity at a higher concentration than the first impurity, the second impurity being a lighter element than the first impurity in the first region with masking the second region; and activating the second impurity.

1 . A method of manufacturing a semiconductor device, comprising:
 forming a film of amorphous Si on a substrate including an insulating upper surface;   injecting a first impurity of a first conductivity in a first region and a second region of the film;   crystallizing the film by melting and solidifying the film and activating the first impurity by scanning a first laser light in a first direction and radiating the first laser light over the film;   injecting a second impurity of a second conductivity at a higher concentration than the first impurity, the second impurity being a lighter element than the first impurity in the first region with masking the second region; and   activating the second impurity.   
     
     
         2 . The method of manufacturing a semiconductor device according to  claim 1 , wherein the first impurity is phosphorus. 
     
     
         3 . The method of manufacturing a semiconductor device according to  claim 1 , wherein a surface temperature of the film is controlled to be 800 to 1400° C., and the upper surface temperature of the substrate is controlled to be 400° C. or less, when the first laser light is to be radiated. 
     
     
         4 . The method of manufacturing a semiconductor device according to  claim 1 , wherein the film that is oriented in a (100) axis direction is formed by scanning the first laser light in the first direction and radiating the first laser light over the film. 
     
     
         5 . The method of manufacturing a semiconductor device according to  claim 1 , wherein the second impurity is boron. 
     
     
         6 . The method of manufacturing a semiconductor device according to  claim 1 , further comprising;
 injecting a third impurity of non-conductivity in the second region to be made amorphous after having activated the first impurity and before the injection of the second impurity, and   crystallizing the film by melting and solidifying the film by scanning a second laser light in a second direction different from the first direction and radiating the second laser light over the film.   
     
     
         7 . The method of manufacturing a semiconductor device according to  claim 6 , wherein the third impurity is germanium. 
     
     
         8 . The method of manufacturing a semiconductor device according to  claim 6 , wherein the surface temperature of the film is controlled to be 800 to 1400° C., and the upper surface temperature of the substrate is controlled to be 400° C. or less, when the second laser light is to be radiated. 
     
     
         9 . The method of manufacturing a semiconductor device according to  claim 6 , wherein the second direction is different from the first direction by 45 degrees. 
     
     
         10 . The method of manufacturing a semiconductor device according to  claim 6 , wherein the Si film that is oriented in a (110) axis direction is formed by scanning the second laser light in the second direction and radiating the second laser light over the film. 
     
     
         11 . The method of manufacturing a semiconductor device according to  claim 1 , wherein the second impurity is activated by scanning a third laser light and radiating the third laser light over the film. 
     
     
         12 . The method of manufacturing a semiconductor device according to  claim 11 , wherein the surface temperature of the Si film is controlled to be 800 to 1400° C., when the third laser light is to be radiated. 
     
     
         13 . The method of manufacturing a semiconductor device according to  claim 11 , wherein the upper surface temperature of the substrate is controlled to be 400° C. or less, when the third laser light is to be radiated. 
     
     
         14 . A semiconductor device comprising:
 a substrate including an insulating upper surface;   a first element formed on the substrate, the first element comprising an active region of the second conductivity including a crystalline Si film oriented in a first direction, the first element into which a first impurity of a first conductivity and a second impurity of a second conductivity that is a lighter element than the first impurity is injected; and   a second element formed in the substrate, the second element comprising an active region of the first conductivity including a crystalline Si film oriented in a second direction into which the first impurity is injected.   
     
     
         15 . The semiconductor device according to  claim 14 , wherein the first direction and the second direction are a <100> axis direction. 
     
     
         16 . The semiconductor device according to  claim 14 , wherein the first impurity is phosphorus. 
     
     
         17 . The semiconductor device according to  claim 14 , wherein the second impurity is boron. 
     
     
         18 . The semiconductor device according to  claim 14 , wherein a third impurity of non-conductivity is injected into the active region of the first conductivity. 
     
     
         19 . The semiconductor device according to  claim 18 , wherein the first direction is a <100> axis direction, and the second direction is a <110> axis direction. 
     
     
         20 . The semiconductor device according to  claim 18 , wherein the third impurity is germanium.