Method of fabricating an electrochemical device using ultrafast pulsed laser deposition

Abstract

A method of fabricating a multi-layered thin film electrochemical device is provided. The method comprises: providing a first target material in a chamber; providing a substrate in the chamber; emitting a first intermittent laser beam directed at the first target material to generate a first plasma, wherein each pulse of the first intermittent laser beam has a pulse duration of about 20 fs to about 500 ps; depositing the first plasma on the substrate to form a first thin film; providing a second target material in the chamber; emitting a second intermittent laser beam directed at the second target material to generate a second plasma, wherein each pulse of the second intermittent laser beam has a pulse duration of about 20 fs to about 500 ps; and depositing the second plasma on or above the first thin film to form a second thin film.

1 . A method of fabricating a multi-layered thin film electrochemical device, comprising:
 providing a first target material in a chamber;   providing a substrate in the chamber;   emitting a first intermittent laser beam directed at the first target material to generate a first plasma, wherein each pulse of the first intermittent laser beam has a pulse duration of about 20 fs to about 500 ps;   depositing the first plasma on the substrate to form a first thin film;   providing a second target material in the chamber;   emitting a second intermittent laser beam directed at the second target material to generate a second plasma, wherein each pulse of the second intermittent laser beam has a pulse duration of about 20 fs to about 500 ps; and   depositing the second plasma on or above the first thin film to form a second thin film.   
     
     
         2 . The method of  claim 1 , wherein each pulse of the first and second intermittent laser beams has a pulse duration of about 20 fs to about 300 ps. 
     
     
         3 . The method of  claim 2 , wherein each pulse of the first and second intermittent laser beams has a pulse duration of about 50 fs to about 1000 fs. 
     
     
         4 . The method of  claim 1 , wherein the first and second plasmas are substantially free of molten droplets and/or particulates having a size of about 1 μm or greater. 
     
     
         5 . The method of  claim 1 , wherein the first thin film is an anode thin film or a cathode thin film. 
     
     
         6 . The method of  claim 1 , wherein the second thin film is a solid electrolyte thin film. 
     
     
         7 . The method of  claim 1 , wherein the substrate comprises a metal, silicon or a conductive polymer. 
     
     
         8 . The method of  claim 1 , wherein the deposition temperature during the step of depositing the first plasma is about 20° C. to about 900° C. 
     
     
         9 . The method of  claim 8 , wherein the deposition temperature during the step of depositing the first plasma is about 300° C. to about 500° C. 
     
     
         10 . The method of  claim 1 , wherein the deposition temperature during the step of depositing the second plasma is about 20° C. to about 900° C. 
     
     
         11 . The method of  claim 10 , wherein the deposition temperature during the step of depositing the second plasma is about 300° C. to about 500° C. 
     
     
         12 . The method of  claim 1 , wherein the deposition temperature during the step of depositing the second plasma is below about 300° C. 
     
     
         13 . The method of  claim 12 , wherein the deposition temperature during the step of depositing the second plasma is about 25° C. to about 140° C. 
     
     
         14 . The method of  claim 1 , wherein the thickness of each of the first and second thin films is less than about 10 μm. 
     
     
         15 . The method of  claim 1 , wherein each of the first and second thin films has an average surface roughness of less than about 500 nm RMS. 
     
     
         16 . The method of  claim 15 , wherein each of the first and second thin films has an average surface roughness of less than about 50 nm RMS. 
     
     
         17 . The method of  claim 1 , wherein the electrochemical device is selected from the group consisting of a solar cell, an electrochromic cell, a microfuel cell and a thin film battery. 
     
     
         18 . The method of  claim 1 , further comprising a step of selecting a deposition temperature or temperatures at which the first and second plasmas are deposited to obtain a predetermined stoichiometry of the first and second thin films. 
     
     
         19 . The method of  claim 1 , wherein the deposition temperature during the step of depositing the first and/or second plasmas is less than about 300° C. 
     
     
         20 . The method of  claim 19 , wherein the deposition temperature during the step of depositing the first and/or second plasmas is about 25° C. to about 140° C.