Semiconductor device

Abstract

An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure.

1 . A semiconductor device, comprising:
 a first semiconductor stacked layer having a first outermost surface;   a second semiconductor stacked layer having a second outermost surface opposite to the first outermost surface; and   a first conductive structure made of a material different from that of the first semiconductor stacked layer and formed between the first outermost surface and the second outermost surface.   
     
     
         2 . The semiconductor device of  claim 1 , further comprising a second conductive structure formed between the first outermost surface and the second outermost surface. 
     
     
         3 . The semiconductor device of  claim 2 , wherein the first conductive structure is near the first outermost surface than the second outermost surface. 
     
     
         4 . The semiconductor device of  claim 1 , further comprising an active layer between the first semiconductor stacked layer and the second semiconductor stacked layer. 
     
     
         5 . The semiconductor device of  claim 1 , further comprising a transparent layer formed on the first conductive structure. 
     
     
         6 . The semiconductor device of  claim 5 , wherein the transparent layer is electrically connected to the first conductive layer. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the first conductive structure contacts the first semiconductor stacked layer. 
     
     
         8 . The semiconductor device of  claim 1 , wherein the first conductive structure comprises a dot structure or a line structure. 
     
     
         9 . The semiconductor device of  claim 1 , wherein the first conductive structure has a height and a bottom width, wherein a ratio of the height to the bottom width is greater than 1.5. 
     
     
         10 . The semiconductor device of  claim 1 , wherein the first conductive structure has a top width and a bottom width, wherein a ratio of the top width to the bottom width is less than 0.7. 
     
     
         11 . The semiconductor device of  claim 1 , wherein the first semiconductor stacked layer comprises a groove for accommodating the first conductive structure. 
     
     
         12 . The semiconductor device of  claim 1 , wherein the first conductive structure contacts the first outermost surface. 
     
     
         13 . A semiconductor device, comprising:
 a first semiconductor stacked layer having a uppermost surface and a lowermost surface;   a second semiconductor stacked layer near the lowermost surface; and   a first conductive structure made of a material different from that of the first semiconductor stacked layer and having a top surface distant from the lowermost surface, and a bottom surface formed between the uppermost surface and the lowermost surface.   
     
     
         14 . The semiconductor device of  claim 13 , further comprising a transparent layer formed on the first conductive layer. 
     
     
         15 . The semiconductor device of  claim 13 , further comprising an active layer between the first semiconductor stacked layer and the second semiconductor stacked layer. 
     
     
         16 . The semiconductor device of  claim 13 , wherein the top surface has a pattern similar to that of the bottom surface. 
     
     
         17 . The semiconductor device of  claim 13 , wherein the top surface has an elevation substantially equal to that of the uppermost surface. 
     
     
         18 . The semiconductor device of  claim 13 , wherein the first conductive structure has a height and a bottom width, wherein a ratio of the height to the bottom width is greater than 1.5. 
     
     
         19 . The semiconductor device of  claim 13 , wherein the first conductive structure has a top width and a bottom width, wherein a ratio of the top width to the bottom width is less than 0.7. 
     
     
         20 . The semiconductor device of  claim 13 , wherein the first conductive structure comprises a dot structure or a line structure.