Semiconductor devices with extended active regions

Abstract

A method of making a semiconductor device is achieved in and over a semiconductor layer. A trench is formed adjacent to a first active area. The trench is filled with insulating material. A masking feature is formed over a center portion of the trench to expose a first side of the trench between a first side of the masking feature and the first active area. A step of etching into the first side of the trench leaves a first recess in the trench. A first epitaxial region is grown in the first recess to extend the first active area to include the first recess and thereby form an extended first active region.

1 - 18 . (canceled) 
     
     
         19 . A planar semiconductor device, comprising:
 a semiconductor structure having a top surface;   an isolation region of insulating material extending from the top surface to a first depth, wherein the isolation region comprises a trench filled with the insulating material;   an active region of semiconductor material having a central portion and an adjacent portion, wherein
 the central portion extends from the top surface to at least the first depth; 
 the adjacent portion has a top portion at the top surface and a bottom portion at no more than a second depth that is less than the first depth; 
 the adjacent portion is located between the central portion and the isolation region from the top portion to the bottom portion; and 
 the isolation region is directly under the bottom portion of the adjacent portion. 
   
     
     
         20 . The semiconductor device of  claim 19 , further comprising a gate electrode over the central portion and the adjacent portion of the active region. 
     
     
         21 . The semiconductor device of  claim 20 , wherein the gate electrode passes over the isolation region. 
     
     
         22 . The semiconductor device of  claim 20 , further comprising a gate dielectric layer formed over the central portion and the adjacent portion and beneath the gate electrode. 
     
     
         23 . The semiconductor device of  claim 19 , wherein the semiconductor structure is formed of a semiconductor material or combination of materials and the semiconductor structure has a predetermined crystal structure and orientation and the adjacent portion has the same crystal structure and orientation as the semiconductor structure.