Semiconductor device and method of fabricating the same

Abstract

A semiconductor device, includes: a first storage node contact plug penetrating a first interlayer insulation layer and partially protruding above the first interlayer insulation layer; a second storage node contact plug contacting the first storage node contact plug that protrudes above the first interlayer insulation layer; a storage node contacting a top surface of the second storage node contact plug; and a second interlayer insulation layer formed over the first interlayer insulation layer, wherein the second interlayer insulation layer surrounds an outer sidewall at a bottom region of the first storage node, and the second storage node contact plug, and wherein the first storage node contact plug protruding above the first interlayer insulation layer and the second storage node contact plug.

1 . A semiconductor device, comprising:
 a first storage node contact plug penetrating a first interlayer insulation layer and partially protruding above the first interlayer insulation layer;   a second storage node contact plug contacting the first storage node contact plug that protrudes above the first interlayer insulation layer;   a storage node contacting a top surface of the second storage node contact plug; and   a second interlayer insulation layer formed over the first interlayer insulation layer, the second interlayer insulation layer surrounding an outer sidewall at a bottom region of the storage node, the second storage node contact plug, and the first storage node contact plug protruding above the first interlayer insulation layer.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the first interlayer insulation layer comprises an oxide layer. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the second interlayer insulation layer comprises a nitride layer. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the first interlayer insulation layer comprises an oxide layer and the second interlayer insulation layer comprises a nitride layer. 
     
     
         5 . The semiconductor device of  claim 1 , wherein a thickness of the second interlayer insulation layer is less than a thickness of the first interlayer insulation layer. 
     
     
         6 . The semiconductor device of  claim 1 , wherein the first storage node contact plug and the second storage node contact plug are formed of the same material. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the first storage node contact plug and the second storage node contact plug comprise a polysilicon layer. 
     
     
         8 . The semiconductor device of  claim 1 , wherein the second storage node contact plug has a zigzag structure wherein the second storage node contact plug overlaps the first storage node contact plug by a predetermined region. 
     
     
         9 . The semiconductor device of  claim 1 , wherein the storage node includes any one of titanium nitride (TiN), tantalum nitride (TaN), hafnium ruthenium (HfN), ruthenium (Ru), ruthenium oxide (RuO 2 ), platinum (Pt), iridium (Ir), and iridium oxide (IrO 2 ), or a stack layer thereof. 
     
     
         10 . The semiconductor device of  claim 1 , further comprising an ohmic contact layer between the second storage node contact plug and the storage node. 
     
     
         11 . The semiconductor device of  claim 10 , wherein the ohmic contact layer comprises metal silicide.