Deuterated structures for image sensors and methods for forming the same

Abstract

A pixel cell with a photo-conversion device and at least one structure includes a deuterated material adjacent the photo-conversion device.

1 - 44 . (canceled) 
     
     
         45 . A method of forming a pixel cell, the method comprising the acts of:
 forming a photo-conversion device; and   forming at least one structure comprising a deuterated material adjacent the photo-conversion device.   
     
     
         46 . The method of  claim 45 , wherein the act of forming the at least one structure comprises forming an isolation region by forming a trench within the substrate and partially filling the trench with a deuterated material. 
     
     
         47 . The method of  claim 46 , wherein the act of at least partially filling the trench comprises lining the trench with deuterated nitride. 
     
     
         48 . The method of  claim 47 , wherein the deuterated nitride liner is formed having a thickness within the range of approximately 50 Å to approximately 150 Å. 
     
     
         49 . The method of  claim 47 , further comprising the act of forming an oxide liner in the trench. 
     
     
         50 . The method of  claim 46 , wherein the act of at least partially filling the trench comprises lining the trench with deuterated oxide. 
     
     
         51 . The method of  claim 50 , wherein the oxide liner is formed having a thickness within the range of approximately 50 Å to approximately 150 Å. 
     
     
         52 . The method of  claim 46 , further comprising the act of forming a doped well of a first conductivity type in the substrate surrounding the trench. 
     
     
         53 . The method of  claim 46 , further comprising the act of filling the trench with a dielectric material selected from the group consisting of high density plasma, high density plasma, silicon oxide, oxynitride, nitride, and high temperature polymer. 
     
     
         54 . The method of  claim 46 , further comprising implanting deuterium into the substrate at a surface of the substrate within the trench. 
     
     
         55 . The method of  claim 54 , wherein the act of implanting is conducted before the act of at least partially filling the trench. 
     
     
         56 . The method of  claim 54 , wherein the act of implanting deuterium comprises using an implant dose within the range of approximately 1×10 13  atoms/cm 2  to approximately 1×10 15  atoms/cm 2 . 
     
     
         57 . The method of  claim 56 , wherein the act of implanting deuterium comprises using an implant dose is approximately 2×10 14  atoms/cm 2 . 
     
     
         58 . The method of  claim 54 , wherein he act of implanting deuterium comprises implanting at an energy within the range of approximately 10 keV to approximately 100 keV. 
     
     
         59 . The method of  claim 58 , wherein he act of implanting deuterium comprises implanting at an energy of approximately 40 keV. 
     
     
         60 . The method of  claim 54 , further comprising conducting and an inert anneal after the act of implanting. 
     
     
         61 . The method of  claim 60 , wherein the act of conducting an inert anneal comprises annealing at a temperature within the range of approximately 800° C. to approximately 1000° C. 
     
     
         62 . The method of  claim 61 , wherein the act of conducting an inert anneal comprises annealing at a temperature of approximately 850° C. 
     
     
         63 . The method of  claim 60 , wherein the act of conducting an inert anneal comprises annealing for a time within the range of approximately 10 minutes to approximately 30 minutes. 
     
     
         64 . The method of  claim 63 , wherein the act of conducting an inert anneal comprises annealing for approximately 20 minutes. 
     
     
         65 . The method of  claim 46 , further comprising the act of annealing at a pressure within the range of approximately 1 atm to approximately 5 atm. 
     
     
         66 . The method of  claim 65 , wherein the act of annealing is conducted subsequently to the act of at least partially filling the trench. 
     
     
         67 . The method of  claim 66 , wherein the act of annealing comprises annealing at a pressure of approximately 5 atm. 
     
     
         68 . The method of  claim 65 , wherein the act of annealing comprises annealing at a temperature within the range of approximately 300° C. to approximately 500° C. 
     
     
         69 . The method of  claim 68 , wherein the act of annealing comprises annealing at a temperature of approximately 400° C. 
     
     
         70 . The method of  claim 65 , wherein the act of annealing comprises annealing for a time within the range of approximately 30 minutes to approximately 120 minutes. 
     
     
         71 . The method of  claim 70 , wherein the act of annealing comprises annealing for 30 minutes. 
     
     
         72 . The method of  claim 45 , wherein the act of forming the at least one structure comprises forming a transistor coupled to the photo-conversion device by forming the transistor comprising a deuterated gate oxide layer. 
     
     
         73 . The method of  claim 45 , wherein the act of forming the at least one structure comprises forming a deuterated dielectric layer over the photo-conversion device. 
     
     
         74 . The method of  claim 73 , wherein the act of forming deuterated dielectric layer comprises forming the deuterated dielectric layer extending over at least one transistor gate and a floating diffusion region. 
     
     
         75 . A method of forming an isolation region, the method comprising:
 etching a trench in a substrate; and   partially filling the trench with a deuterated material.   
     
     
         76 . The method of  claim 75 , wherein the act of partially filling the trench comprises lining the trench with deuterated nitride. 
     
     
         77 . The method of  claim 76 , wherein the deuterated nitride liner is formed having a thickness within the range of approximately 50 Å to approximately 150 Å. 
     
     
         78 . The method of  claim 76 , further comprising the act of forming an oxide liner between the deuterated nitride liner and the substrate. 
     
     
         79 . The method of  claim 75 , wherein the act of partially filling the trench comprises lining the trench with deuterated oxide. 
     
     
         80 . The method of  claim 79 , wherein the oxide liner is formed having a thickness within the range of approximately 50 Å to approximately 150 Å. 
     
     
         81 . The method of  claim 75 , further comprising forming a deuterated oxide layer over the substrate prior to etching the trench. 
     
     
         82 . The method of  claim 81 , further comprising forming a deuterated dielectric layer over the deuterated oxide layer prior to etching the trench. 
     
     
         83 . The method of  claim 82 , wherein the act of forming the deuterated dielectric layer comprises forming a deuterated nitride layer. 
     
     
         84 . The method of  claim 75 , further comprising implanting deuterium into the substrate at a surface of the substrate within the trench. 
     
     
         85 . The method of  claim 84 , wherein the act of implanting is conducted before partially filling the trench. 
     
     
         86 . The method of  claim 84 , wherein the act of implanting deuterium comprises using an implant dose within the range of approximately 1×10 13  atoms/cm 2  to approximately 1×10 15  atoms/cm 2 . 
     
     
         87 . The method of  claim 86 , wherein the act of implanting deuterium comprises using an implant dose is approximately 2×10 14  atoms/cm 2 . 
     
     
         88 . The method of  claim 84 , wherein he act of implanting deuterium comprises implanting at an energy within the range of approximately 10 keV to approximately 100 keV. 
     
     
         89 . The method of  claim 88 , wherein he act of implanting deuterium comprises implanting at an energy of approximately 40 keV. 
     
     
         90 . The method of  claim 84 , further comprising conducting and an inert anneal after the act of implanting. 
     
     
         91 . The method of  claim 90 , wherein the act of conducting an inert anneal comprises annealing at a temperature within the range of approximately 800° C. to approximately 1000° C. 
     
     
         92 . The method of  claim 91 , wherein the act of conducting an inert anneal comprises annealing at a temperature of approximately 850° C. 
     
     
         93 . The method of  claim 90 , wherein the act of conducting an inert anneal comprises annealing for approximately 10 minutes to approximately 30 minutes. 
     
     
         94 . The method of  claim 93 , wherein the act of conducting an inert anneal comprises annealing for approximately 20 minutes. 
     
     
         95 . The method of  claim 75 , further comprising the act of annealing at a pressure within the range of approximately 1 atm to approximately 5 atm. 
     
     
         96 . The method of  claim 95 , wherein the act of annealing is conducted subsequently to the act of at least partially filling the trench. 
     
     
         97 . The method of  claim 95 , wherein the act of annealing comprises annealing at a pressure of approximately 5 atm. 
     
     
         98 . The method of  claim 97 , wherein the act of annealing comprises annealing at a temperature within the range of approximately 300° C. to approximately 500° C. 
     
     
         99 . The method of  claim 98 , wherein the act of annealing comprises annealing at a temperature of approximately 400° C. 
     
     
         100 . The method of  claim 95 , wherein the act of annealing comprises annealing for a time within the range of approximately 30 minutes to approximately 120 minutes. 
     
     
         101 . The method of  claim 100 , wherein the act of annealing comprises annealing for 30 minutes.