Alloys With Low Coefficient Of Thermal Expansion As PDC Catalysts And Binders

Abstract

A cutting table includes a lattice structure and a catalyst material deposited within voids formed within the lattice. The catalyst material is deposited in the voids during a sintering process that forms the lattice. The catalyst material has a coefficient of thermal expansion that is less than that of cobalt. The catalyst material is any one of chromium, tantalum, ruthenium, an alloy of cobalt, an alloy of a Group VIII metal and at least one non-catalyst metal, an alloy of two or more Group VIII metals, or a eutectic alloy. In certain embodiments, the catalyst material has a thermal conductivity that is greater than that of cobalt. In certain embodiments, the cutting table is bonded to a substrate, which is formed from a substrate material and a binder material. In some embodiments, the binder material and the catalyst material are the same; while in others, they are different.

1 . A cutting table, comprising:
 a lattice structure forming interstitial spaces therein; and   a catalyst material deposited within the interstitial spaces during a sintering process that forms the lattice structure, the catalyst material facilitating the growth of the lattice structure, the catalyst material having a coefficient of thermal expansion that is less than the coefficient of thermal expansion of cobalt.   
     
     
         2 . The cutting table of  claim 1 , wherein the catalyst material is selected from a group consisting of chromium, tantalum, and ruthenium. 
     
     
         3 . The cutting table of  claim 1 , wherein the catalyst material is selected from a group consisting of alloys of cobalt, alloys of a Group VIII metal and at least one non-catalyst metal, and alloys of two or more Group VIII metals. 
     
     
         4 . The cutting table of  claim 1 , wherein the catalyst material comprises a eutectic alloy, the eutectic alloy comprising a eutectic composition. 
     
     
         5 . The cutting table of  claim 1 , wherein the catalyst material comprises a near eutectic alloy. 
     
     
         6 . The cutting table of  claim 1 , wherein the catalyst material has a thermal conductivity that is greater than the thermal conductivity of cobalt. 
     
     
         7 . The cutting table of  claim 1 , wherein the lattice structure comprises a polycrystalline diamond. 
     
     
         8 . A cutter, comprising:
 a substrate comprising a top surface;   a cutting table, comprising:
 a cutting surface; 
 an opposing surface coupled to the top surface; 
 a cutting table outer wall extending from the circumference of the opposing surface to the circumference of the cutting surface; 
 a lattice structure forming interstitial spaces therein; and 
 a catalyst material deposited within the interstitial spaces during a sintering process that forms the lattice structure, the catalyst material facilitating the growth of the lattice structure, the catalyst material having a coefficient of thermal expansion that is less than the coefficient of thermal expansion of cobalt. 
   
     
     
         9 . The cutter of  claim 8 , wherein the catalyst material is selected from a group consisting of chromium, tantalum, and ruthenium. 
     
     
         10 . The cutter of  claim 8 , wherein the catalyst material is selected from a group consisting of alloys of cobalt, alloys of a Group VIII metal and at least one non-catalyst metal, and alloys of two or more Group VIII metals. 
     
     
         11 . The cutter of  claim 8 , wherein the catalyst material comprises a eutectic alloy, the eutectic alloy comprising a eutectic composition. 
     
     
         12 . The cutter of  claim 8 , wherein the catalyst material comprises a near eutectic alloy. 
     
     
         13 . The cutter of  claim 8 , wherein the catalyst material has a thermal conductivity that is greater than the thermal conductivity of cobalt. 
     
     
         14 . The cutter of  claim 8 , wherein the lattice structure comprises a polycrystalline diamond. 
     
     
         15 . The cutter of  claim 8 , wherein the substrate is formed from a substrate powder and a binder material, the binder material cementing the substrate powder to form the substrate, the binder material being the same as the catalyst material. 
     
     
         16 . The cutter of  claim 15 , wherein the catalyst material originates in the substrate and infiltrates into the cutting table. 
     
     
         17 . The cutter of  claim 8 , wherein the substrate is formed from a substrate powder and a binder material, the binder material cementing the substrate powder to form the substrate, the binder material being different than the catalyst material. 
     
     
         18 . The cutter of  claim 17 , wherein the melting point of the catalyst material is lower than the melting point of the binder material. 
     
     
         19 . A method for fabricating a cutter, comprising:
 forming a cutter table, the cutter table comprising:
 a lattice structure forming interstitial spaces therein; and 
 a catalyst material deposited within the interstitial spaces during a sintering process that forms the lattice structure, the catalyst material facilitating the growth of the lattice structure, the catalyst material having a coefficient of thermal expansion that is less than the coefficient of thermal expansion of cobalt; 
   forming a substrate; and   bonding the cutter table to a substrate.   
     
     
         20 . The method of  claim 19 , wherein the catalyst material is selected from a group consisting of chromium, tantalum, and ruthenium. 
     
     
         21 . The method of  claim 19 , wherein the catalyst material is selected from a group consisting of alloys of cobalt, alloys of a Group VIII metal and at least one non-catalyst metal, and alloys of two or more Group VIII metals. 
     
     
         22 . The method of  claim 19 , wherein the catalyst material comprises a eutectic alloy, the eutectic alloy comprising a eutectic composition. 
     
     
         23 . The method of  claim 19 , wherein the catalyst material comprises a near eutectic alloy. 
     
     
         24 . The method of  claim 19 , wherein the catalyst material has a thermal conductivity that is greater than the thermal conductivity of cobalt. 
     
     
         25 . The method of  claim 19 , wherein the lattice structure comprises a polycrystalline diamond. 
     
     
         26 . The method of  claim 19 , wherein forming the substrate comprises:
 mixing a substrate powder and a binder material together to form a substrate mixture;   raising the pressure and temperature to a first temperature range to liquefy the binder material and allow the binder material to cement the substrate powder.   
     
     
         27 . The method of  claim 19 , wherein forming the cutter table comprises:
 placing a diamond powder on top of the substrate;   allowing the liquefied binder material to infiltrate from the substrate into the diamond powder; and   converting the diamond powder into the lattice structure,   wherein the binder material and the catalyst material are the same.   
     
     
         28 . The method of  claim 19 , wherein forming the cutter table comprises:
 mixing a diamond powder and a catalyst material together to form a PCD table mixture;   placing the mixture on top of the substrate;   raising the pressure and temperature to a second temperature range to liquefy the catalyst material; and   allowing the catalyst material to sinter the diamond powder to form the lattice structure,   wherein the binder material and the catalyst material are different, and wherein the second temperature range is less than the first temperature range, and wherein the second temperature range is below the melting point of the binder material.