Single-crystal silicon substrate, soi substrate, semiconductor device, display device, and manufacturing method of semiconductor device

Abstract

A semiconductor device of the present invention is arranged in such a manner that a MOS non-single-crystal silicon thin-film transistor including a non-single-crystal silicon thin film made of polycrystalline silicon, a MOS single-crystal silicon thin-film transistor including a single-crystal silicon thin film, and a metal wiring are provided on an insulating substrate. With this arrangement, (i) a semiconductor device in which a non-single-crystal silicon thin film and a single-crystal silicon thin-film device are formed and high-performance systems are integrated, (ii) a method of manufacturing the semiconductor device, and (iii) a single-crystal silicon substrate for forming the single-crystal silicon thin-film device of the semiconductor device are obtained.

1 . (canceled) 
     
     
         2 . A single-crystal silicon substrate, comprising:
 an impurity ion implanted/diffused area in which a PNP junction structure or an NPN junction structure, to which impurity ions are implanted, is provided near a surface of the single-crystal silicon substrate; and   an oxidized film formed on the impurity ion implanted/diffused area.   
     
     
         3 . The single-crystal silicon substrate as defined in  claim 2 , further comprising a dense position of implanted hydrogen ions, to which a predetermined concentration of hydrogen ions is implanted for a predetermined depth. 
     
     
         4 . (canceled) 
     
     
         5 . The single-crystal silicon substrate as defined in  claim 2 , wherein, a thickness of the oxidized film is not less than 200 nm. 
     
     
         6 . An SOI substrate in which a single-crystal thin film is provided on an insulating substrate, comprising:
 a bonded interface at which an insulating film formed on the insulating substrate is bonded with a covering film with which the single-crystal silicon substrate is covered,   the single-crystal silicon substrate being separated at a dense position of implanted hydrogen ions so that the single-crystal silicon thin film is formed,   the insulating substrate being a light-transmitting substrate, and   the single-crystal silicon substrate being separated by means of heat treatment.   
     
     
         7 . An SOI substrate in which a single-crystal silicon thin film is provided on an insulating substrate, comprising:
 a bonded interface at which an insulating film formed on the insulating substrate is bonded with a covering film with which a single-crystal silicon substrate is covered,   the single-crystal silicon thin film being formed by separating the single-crystal silicon substrate at a dense position of implanted hydrogen ions by means of heat treatment, and   at the bonded interface, the insulating film is arranged to satisfy that a tan θ is not more than 0.06, where θ is the angle between (i) a maximum slope curve of micro-roughness, the micro-roughness being measured in a 1-5 μm square and not more than 5 nm in height, and (ii) an average surface plane.   
     
     
         8 . An SOI substrate in which a single-crystal silicon thin film is provided on an insulating substrate, comprising:
 a bonded interface at which an insulating film formed on the insulating substrate is bonded with a covering film with which a single-crystal silicon substrate is covered,   the single-crystal silicon thin film being formed by separating the single-crystal silicon substrate at a dense position of implanted hydrogen ions by means of heat treatment, and   contact angles of a surface of the insulating film and a surface of the covering film with respect to water being not more than 10°.   
     
     
         9 . An SOI substrate in which a single-crystal silicon thin film is provided on an insulating substrate, comprising:
 a bonded interface at which an insulating film formed on the insulating substrate is bonded with a covering film with which a single-crystal silicon substrate is covered,   the single-crystal silicon thin film being formed by separating the single-crystal silicon substrate at a dense position of implanted hydrogen ions by means of heat treatment, and   the insulating film being an oxidized silicon film formed by a plasma chemical vapor deposition method using a gas mixture of a TEOS gas and an oxygen gas.   
     
     
         10 . An SOI substrate in which a single-crystal silicon thin film is provided on an insulating substrate, comprising:
 a bonded interface at which an insulating film formed on the insulating substrate is bonded with a covering film with which a single-crystal silicon substrate is covered,   the single-crystal silicon thin film being formed by separating the single-crystal silicon substrate at a dense position of implanted hydrogen ions by means of heat treatment, and   at the bonded interface, the insulating film which is made of oxidized silicon and 5-300 nm thick being bonded.   
     
     
         11 . An SOI substrate in which a single-crystal silicon thin film is provided on an insulating substrate, comprising:
 a bonded interface at which an insulating film formed on the insulating substrate is bonded with a covering film with which a single-crystal silicon substrate is covered,   the single-crystal silicon thin film being formed by separating the single-crystal silicon substrate at a dense position of implanted hydrogen ions by means of heat treatment, and   a adhesive strength at the bonded interface being not less than 0.6N/m.   
     
     
         12 . The SOI substrate as defined in  claim 6 , wherein, a single-crystal thin-film device is formed on the single-crystal silicon substrate, and the single-crystal thin-film contains the single-crystal thin-film device being formed by separating the single-crystal silicon substrate at the dense position by means of heat treatment. 
     
     
         13 . The SOI substrate as defined in  claim 7 , wherein, a single-crystal thin-film device is formed on the single-crystal silicon substrate, and the single-crystal thin-film contains the single-crystal thin-film device being formed by separating the single-crystal silicon substrate at the dense position by means of heat treatment. 
     
     
         14 . The SOI substrate as defined in  claim 6 , further comprising:
 a single-crystal silicon thin-film device manufactured from the single-crystal silicon thin film; and   a non-single-crystal silicon thin-film device which is manufactured from a non-single-crystal silicon thin film provided in an area on the insulating substrate, the area being different from an area where the single-crystal silicon thin film is provided.   
     
     
         15 . The SOI substrate as defined in  claim 7 , further comprising:
 a single-crystal silicon thin-film device manufactured from the single-crystal silicon thin film; and   a non-single-crystal silicon thin-film device which is manufactured from a non-single-crystal silicon thin film provided in an area on the insulating substrate, the area being different from an area where the single-crystal silicon thin film is provided.   
     
     
         16 . A display device, comprising:
 an SOI substrate including a single-crystal silicon thin film provided on an insulating substrate, on the single-crystal silicon thin film a semiconductor device structure being formed,   wherein, the SOI substrate includes a bonded interface at which an insulating film formed on the insulating substrate is bonded with a covering film with which a single-crystal silicon substrate is covered, the single-crystal silicon substrate is separated at a dense position of implanted hydrogen ions by heat treatment so that the single-crystal silicon thin film is formed, and the insulating substrate is a light-transmitting substrate.   
     
     
         17 . A display device, comprising:
 a semiconductor device in which a non-single-crystal silicon thin-film device and a single-crystal silicon thin-film device are provided on different areas of an insulating substrate,   the semiconductor device being used as an active matrix substrate of a display panel.   
     
     
         18 . A method of manufacturing a semiconductor device in which a single-crystal silicon thin-film device manufactured from a single-crystal silicon thin film and a non-single-crystal silicon thin film are formed on an insulating substrate,
 wherein, after a circuit including the single-crystal silicon thin-film device is formed on the insulating substrate, the non-single-crystal silicon thin film is formed.   
     
     
         19 . The method of manufacturing the semiconductor device as defined in  claim 18 , wherein, on the single-crystal silicon thin-film device, a protective interlayer insulating film, a contact hole, and a metal wiring are formed. 
     
     
         20 . The method of manufacturing the semiconductor device as defined in  claim 18 , wherein, after the single-crystal silicon thin-film device is formed, an interlayer insulating film is formed, and then the non-single-crystal silicon thin film is formed. 
     
     
         21 . A method of manufacturing a semiconductor device in which a single-crystal silicon thin-film device manufactured from a single-crystal silicon thin film and a non-single-crystal silicon thin film are formed on an insulating substrate,
 wherein, after the non-single-crystal silicon thin film is formed on the insulating substrate, the single-crystal silicon thin-film device is formed.   
     
     
         22 . The method of manufacturing the semiconductor device as defined in  claim 18 , wherein, the single-crystal silicon thin-film device is a MOS single-crystal silicon thin-film transistor. 
     
     
         23 . The method of manufacturing the semiconductor device as defined in  claim 21 , wherein, the single-crystal silicon thin-film device is a MOS single-crystal silicon thin-film transistor. 
     
     
         24 . The method of manufacturing the semiconductor device as defined in  claim 18 , wherein, the single-crystal silicon thin-film device is a bipolar single-crystal silicon thin-film transistor. 
     
     
         25 . The method of manufacturing the semiconductor device as defined in  claim 21 , wherein, the single-crystal silicon thin-film device is a bipolar single-crystal silicon thin-film transistor. 
     
     
         26 . The method of manufacturing the semiconductor device as defined in  claim 18 , wherein, with respect to a single-crystal silicon substrate for manufacturing the single-crystal silicon thin-film device, a predetermined concentration of hydrogen ions is implanted for a predetermined depth. 
     
     
         27 . The method of manufacturing the semiconductor device as defined in  claim 21 , wherein, with respect to a single-crystal silicon substrate for manufacturing the single-crystal silicon thin-film device, a predetermined concentration of hydrogen ions is implanted for a predetermined depth. 
     
     
         28 . The method of manufacturing the semiconductor device as defined in  claim 26 , wherein, an energy for implanting the hydrogen ions is arranged so that an energy which is figured out by subtracting an energy corresponding to a projection range of the hydrogen ions, the projection range corresponding to a thickness of an oxidized film, from the energy for implanting the hydrogen ions is smaller than an energy corresponding to a projection range of atoms constituting a material in a layer formed on the oxidized film. 
     
     
         29 . The method of manufacturing the semiconductor device as defined in  claim 27 , wherein, an energy for implanting the hydrogen ions is arranged so that an energy after subtracting an energy corresponding to a projection range of the hydrogen ions in a gate electrode material for a gate electrode thickness from an incident energy of the hydrogen ions is no more than an energy corresponding to a projection range of the heaviest ions of gate constituent materials for a gate oxide thickness. 
     
     
         30 . The method of manufacturing the semiconductor device as defined in  claim 26 , wherein, a thickness of the single-crystal silicon substrate including the dense position is about not more than 100 μm. 
     
     
         31 . The method of manufacturing the semiconductor device as defined in  claim 27 , wherein, a thickness of the single-crystal silicon substrate including the dense position is about not more than 100 μm. 
     
     
         32 . The method of manufacturing the semiconductor device as defined in  claim 21 , wherein, after the non-single-crystal silicon thin film is formed on the insulating substrate, at least a surface area from which the non-single-crystal silicon is removed and to which a single-crystal silicon is to be bonded is planarized in advance by performing a GCIB (Gas Cluster Ion Beam) using halide in approximately 3 keV. 
     
     
         33 . A method of manufacturing a semiconductor device, comprising the step of:
 (a) bonding an insulating film formed on an insulating substrate with a covering film with which a single-crystal silicon substrate is covered, the method further comprising the step of:   (b) before the step (a), regulating a tangent of a maximum slope of micro-roughness on a surface of the insulating film to a surface plane of the insulating substrate, measured in a 1-5 μm square, is not more than 0.06, the micro-roughness being not more than 5 nm in height.