Chemical vapor deposition method and system for semiconductor devices

Abstract

A method of and system for chemical vapor deposition of layers of material on substrates for producing semiconductor devices provides for continuous in-line processing. The method includes continuously conveying a plurality of substrates through a plurality of in-line deposition regions, continuously providing and distributing a chemical vapor at each region to deposit material for the layers, and continuously supplying a flow of chemical material for each region to provide the chemical vapor. The system includes a continuous in-line substrate conveyance apparatus for moving a plurality of substrates through a plurality of deposition regions, a deposition head for providing and distributing a chemical vapor at each of the regions to deposit material for the layers, and a chemical material supply apparatus for providing a flow of chemical materials to each of the heads for the chemical vapor.

1 - 18 . (canceled) 
     
     
         19 . A system for chemical vapor deposition of layers of material on substrates for producing semiconductor devices, comprising:
 a continuous in-line substrate conveyance apparatus for moving a plurality of substrates through a plurality of deposition regions;   a chemical material supply apparatus for providing a flow of chemical materials for each of said regions, including reactive materials;   a deposition head for providing and distributing a chemical vapor at each of said regions to deposit material for the layers, including,
 an emission and distribution face at said region for said head, 
 wall structure defining a first plenum layer having a first plenum and a second plenum layer having a second plenum, for receiving chemical materials from said supply apparatus and for maintaining separation between said plenums of received chemical materials capable of reacting when not separated, and 
 wall structure defining a third plenum layer for receiving chemical material from said first plenum, maintaining separation of chemical material received from said first plenum, and distributing said separated chemical material to said emission and distribution face, and for receiving chemical material from said second plenum, maintaining separation of chemical material received from said second plenum, and distributing said separated chemical material to said emission and distribution face. 
   
     
     
         20 . (canceled) 
     
     
         21 . A system for chemical vapor deposition as defined in  claim 19 , wherein:
 said third plenum layer has a first set of elongated plenums for chemical material from said first plenum, and a second set of elongated plenums for chemical material from said second plenum.   
     
     
         22 . A system for chemical vapor deposition as defined in  claim 21 , wherein:
 said first set of elongated plenums and said second set of elongated plenums have alternating positions in said third plenum layer.   
     
     
         23 . A system for chemical vapor deposition as defined in  claim 21 , wherein each of said heads includes:
 a first set of flow path structures providing a first set of sealed flow paths from said first plenum to said first set of elongated plenums of said third plenum layer; and   other structure providing a second set of sealed flow paths from said second plenum to said second set of elongated plenums of said third plenum layer.   
     
     
         24 . A system for chemical vapor deposition as defined in  claim 23 , wherein:
 said first set of flow path structures provides at least two sealed flow paths from said first plenum to each plenum of said first set of elongated plenums of said third plenum layer; and   said other structure provides at least two sealed flow paths from said second plenum to each plenum of said second set of elongated plenums of said third plenum layer.   
     
     
         25 . A system for chemical vapor deposition as defined in  claim 19 , wherein:
 said emission and distribution face   has an area of greater than or equal to about 81 in 2  (523 cm 2 ).   
     
     
         26 . A system for chemical vapor deposition as defined in  claim 19 , wherein:
 the distance of said substrate conveyance through said deposition regions is greater than or equal to about 7 feet (2.1 m).   
     
     
         27 . A system for chemical vapor deposition as defined in  claim 19 , wherein:
 said deposition regions number at least 5.   
     
     
         28 . A system for chemical vapor deposition as defined in  claim 19 , wherein each of said heads includes:
 a set of flow path structures providing a set of flow paths from said first plenum to said third plenum layer through said second plenum layer.   
     
     
         29 . A system for chemical vapor deposition as defined in  claim 28 , wherein:
 said set of flow paths through said second plenum layer are through said second plenum of said second plenum layer.   
     
     
         30 . A system of chemical vapor deposition as defined in  claim 29 , wherein:
 said set of flow paths are sealed.   
     
     
         31 . A system for chemical vapor deposition as defined in  claim 19 , wherein:
 said first and second plenums have generally planar configurations, and said first plenum is layered generally over said second plenum.   
     
     
         32 . A system for chemical vapor deposition as defined in  claim 19 , wherein:
 said wall structure defining said third plenum layer and said emission and distribution face are configured for emitting and distributing said separated chemical materials from said third plenum layer into said deposition region, maintaining the mixtures of chemical materials from said third plenum layer in entering said region.   
     
     
         33 . A system for chemical vapor deposition as defined in  claim 19 , wherein:
 said wall structure defining said third plenum layer and said emission and distribution face are configured for maintaining the temperatures of said chemical materials within said third plenum layer actively unaffected by a temperature change source directed to said third plenum layer while said chemical materials are within said layer.   
     
     
         34 . A system for chemical vapor deposition as defined in  claim 19 , wherein:
 said wall structure defining said third plenum layer and said emission and distribution face are configured for emitting and distributing said separated chemical materials from said third plenum layer into said deposition region, maintaining the mixtures of chemical materials from said third plenum layer in entering said region, and for maintaining the temperatures of said chemical materials within said third plenum layer actively unaffected by a temperature source directed to said third plenum layer while said chemical materials are within said layer.