Semiconductor device and method of manufacturing the semiconductor device

Abstract

A method of manufacturing a semiconductor device includes forming silicon pillar 11 on substrate 10 , forming a protective film which covers an upper end portion and a lower end portion of a side surface of silicon pillar 11 , forming a constricted portion by anisotropic etching in a portion of the side surface of silicon pillar 11 which is not covered with the protective film after forming the protective film, removing the protective film after forming the constricted portion, forming gate oxide film 12 which covers the side surface of silicon pillar 11 in which the constricted portion is formed, and forming gate electrode 13 which covers gate oxide film 12.

1 . A semiconductor device comprising:
 a capacitor; and   a transistor disposed by being superposed on the capacitor and connected to the capacitor in series, the transistor comprising:   a silicon pillar which is formed on a constricted portion in which a particular crystal plane exposed largely in comparison with other crystal planes, the silicon pillar being formed on a substrate;   a gate oxide film formed which covers a side surface of the silicon pillar; and   a gate electrode which covers the gate oxide film.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the particular crystal plane is a Si{100} plane. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the constricted portion is provided with a bar portion extending along an axial direction of the silicon pillar and pair of end portions being formed at both ends of the bar portion, wherein a side surface of each end portions is inclined with regard to a surface perpendicular to the axial direction at a predetermined angle. 
     
     
         4 . The semiconductor device according to  claim 3 , wherein the predetermined angle is 54.71°.