Semiconductor device and method of fabricating the same

Abstract

A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a first conductive member formed on the semiconductor substrate; a first insulating film formed on the same layer as the first conductive member; a second conductive member formed so as to contact with a portion of an upper surface of the first conductive member; a second insulating film formed on the first insulating film so as to contact with a portion of the upper surface of the first conductive member, and including at least one type of element among elements contained in the first insulating film except Si; and an etching stopper film formed on the second insulating film so as to contact with a portion of a side surface of the second conductive member, and having an upper edge located below the upper surface of the second conductive member.

1 - 7 . (canceled) 
     
     
         8 . A method of fabricating a semiconductor device, comprising:
 forming a first insulating film on a semiconductor device provided with a semiconductor element;   forming a first conductive member in the first insulating film;   forming a second insulating film on upper surfaces of the first insulating film and the first conductive member;   sequentially forming an etching stopper film and a third insulating film on the second insulating film;   forming a trench by etching the third insulating film so as to expose the etching stopper film;   deepening the trench so as to expose the first conductive member by removing the etching stopper film and the second insulating film located under the trench; and   forming a second conductive member in the trench which is deepened.   
     
     
         9 . The method of fabricating a semiconductor device according to  claim 8 , wherein the second insulating film is formed using a material which contains at least one type of element among elements contained in the first insulating film except Si. 
     
     
         10 . The method of fabricating a semiconductor device according to  claim 8 , wherein the second insulating film is made of substantially same material as the first insulating film. 
     
     
         11 . The method of fabricating a semiconductor device according to  claim 9 , wherein the first and second insulating films contain at least one of O and C. 
     
     
         12 . The method of fabricating a semiconductor device according to  claim 8 , wherein the second insulating film is formed using a material having a permittivity lower than that of the etching stopper film. 
     
     
         13 . The method of fabricating a semiconductor device according to  claim 12 , wherein the etching stopper film is formed using SiN; and
 the second insulating film is formed using one of SiON, SiOC, SiCN and a low-K material.   
     
     
         14 . The method of fabricating a semiconductor device according to  claim 8 , wherein a combination of the first and second conductive members is either a combination of a contact portion of a semiconductor device or a semiconductor element with a contact, a combination of a contact or a via with a wiring, or, a combination of a wiring with a via. 
     
     
         15 . The method of fabricating a semiconductor device according to  claim 8 , wherein an oxide region, in which a region closer to the upper rim is deeper, is formed by applying oxidation treatment to the upper surface of the first conductive member after forming the first conductive member; and
 the upper rim of the first conductive member is processed into a rounded portion without angles by removing the oxide region.   
     
     
         16 . The method of fabricating a semiconductor device according to  claim 8 , wherein an upper surface of the first conductive member is provided in a substantially same vertical position on an interface between the first insulating film and the second insulating film. 
     
     
         17 . The method of fabricating a semiconductor device according to  claim 8 , wherein the trench is deepened by removing the etching stopper film, the second insulating film and a portion of the first insulating film located under the trench. 
     
     
         18 . The method of fabricating a semiconductor device according to  claim 13 , wherein the second insulating film is formed in the thickness of about 3 nm or more. 
     
     
         19 . The method of fabricating a semiconductor device according to  claim 8 , wherein a plurality of the first conductive members and a plurality of the second conductive members are formed at predetermined arranging intervals, respectively, so that a distance between adjacent first and second conductive members is shorter than a distance between adjacent first conductive members and a distance between adjacent second conductive members. 
     
     
         20 . The method of fabricating a semiconductor device according to  claim 8 , wherein a plurality of the first conductive members and a plurality of the second conductive members are formed at predetermined arranging intervals, respectively, so that a distance between adjacent first conductive members is shorter than a distance between adjacent second conductive members and a distance between adjacent first and second conductive members.