Gas barrier film and electronic device

Abstract

Disclosed is a gas barrier film, which demonstrates superior gas barrier properties and surface smoothness, demonstrates a high degree of adhesion between layers and is resistant to cracking when bent, and an electronic device provided therewith. A gas barrier film of the present invention has a base, and a polyorganosiloxane layer and an inorganic material layer sequentially provided on at least one side of the base, and the inorganic material layer is deposited by dynamic ion mixing method.

1 . A gas barrier film, comprising: a base, and a layer containing a polyorganosiloxane-based compound and an inorganic material layer sequentially laminated on at least one side of the base; wherein,
 the inorganic material layer is deposited by dynamic ion mixing method.   
     
     
         2 . The gas barrier film according to  claim 1 , wherein an inorganic compound that composes the inorganic material layer is at least one type of inorganic compound selected from the group consisting of an elemental metal, silicon, graphite, inorganic oxide, inorganic nitride and inorganic oxynitride. 
     
     
         3 . The gas barrier film according to  claim 2 , wherein inorganic compound is at least one type of inorganic compound selected from the group consisting of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, indium oxide and tin-doped indium oxide. 
     
     
         4 . The gas barrier film according to  claim 1 , wherein a plasma-forming gas used in the dynamic ion mixing method contains at least one type of gas selected from the group consisting of helium, argon, neon, krypton and xenon. 
     
     
         5 . The gas barrier film according to  claim 4 , wherein the plasma-forming gas used in the dynamic ion mixing method is a mixed gas further containing at least one type of gas selected from the group consisting of hydrogen, oxygen, nitrogen and fluorocarbons. 
     
     
         6 . The gas barrier film according to  claim 1 , wherein the dynamic ion mixing method is carried out by applying a negative high voltage of −50 kV to −1 kV to the base in pulses. 
     
     
         7 . The gas barrier film according to  claim 1 , wherein the thickness of the layer containing a polyorganosiloxane-based compound is preferably 0.01 μm to 100 μm. 
     
     
         8 . The gas barrier film according to  claim 1 , wherein the polyorganosiloxane-based compound of the layer containing a polyorganosiloxane-based compound is polydimethylsiloxane. 
     
     
         9 . The gas barrier film according to  claim 1 , wherein a layer containing a fluorine-containing resin is provided on the base on the side opposite the side where the layer containing a polyorganosiloxane-based compound is formed. 
     
     
         10 . The gas barrier film according to  claim 1 , wherein the content of the polyorganosiloxane-based compound in the layer containing a polyorganosiloxane-based compound is 50% by weight or more. 
     
     
         11 . The gas barrier film according to  claim 1 , wherein the thickness of the inorganic material layer is 10 nm to 1000 nm. 
     
     
         12 . An electronic device provided with the gas barrier film according to  claim 1 . 
     
     
         13 . The electronic device according to  claim 12 , wherein the electronic device is a solar cell module. 
     
     
         14 . The electronic device according to  claim 13 , wherein the gas barrier film is used as a back protective sheet. 
     
     
         15 . The electronic device according to  claim 12 , wherein the electronic device is an image display element.