Semiconductor integrated circuit device and method for fabricating the same

Abstract

Provided are a semiconductor integrated device and a method for fabricating the same. The semiconductor integrated circuit includes a semiconductor substrate including a first dopant, a first conductive layer pattern formed on the semiconductor substrate, an interlayer dielectric layer formed on the first conductive layer pattern, a second conductive layer pattern formed on the interlayer dielectric layer, and a first vacuum ultraviolet (VUV) blocking layer which blocks a VUV ray radiated to the semiconductor substrate.

1 . A semiconductor integrated circuit comprising:
 a semiconductor substrate including a first dopant;   a first conductive layer pattern formed on the semiconductor substrate, the first conductive layer pattern being a gate electrode of a high voltage driving transistor;   an interlayer dielectric layer formed on the first conductive layer pattern;   a second conductive layer pattern formed on the interlayer dielectric layer; and   a first blocking layer having an insulating property formed conformally on the second conductive layer pattern and the interlayer dielectric layer to block a ray irradiated to the semiconductor substrate.